Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIR640DP-T1-GE3
RFQ
RFQ
1,261
In-stock
Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 1.7 mOhm @ 20A, 10V 2.3V @ 250µA 113nC @ 10V 4930pF @ 20V 4.5V, 10V ±20V
SIR640DP-T1-GE3
RFQ
RFQ
3,133
In-stock
Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 1.7 mOhm @ 20A, 10V 2.3V @ 250µA 113nC @ 10V 4930pF @ 20V 4.5V, 10V ±20V
SIR640DP-T1-GE3
RFQ
RFQ
902
In-stock
Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 1.7 mOhm @ 20A, 10V 2.3V @ 250µA 113nC @ 10V 4930pF @ 20V 4.5V, 10V ±20V
SIR640DP-T1-GE3
RFQ
RFQ
1,261
In-stock
Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 1.7 mOhm @ 20A, 10V 2.3V @ 250µA 113nC @ 10V 4930pF @ 20V 4.5V, 10V ±20V
SIR640DP-T1-GE3
RFQ
RFQ
3,133
In-stock
Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 1.7 mOhm @ 20A, 10V 2.3V @ 250µA 113nC @ 10V 4930pF @ 20V 4.5V, 10V ±20V
SIR640DP-T1-GE3
RFQ
RFQ
902
In-stock
Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 1.7 mOhm @ 20A, 10V 2.3V @ 250µA 113nC @ 10V 4930pF @ 20V 4.5V, 10V ±20V
SIR640DP-T1-GE3
RFQ
RFQ
1,261
In-stock
Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 1.7 mOhm @ 20A, 10V 2.3V @ 250µA 113nC @ 10V 4930pF @ 20V 4.5V, 10V ±20V
SIR640DP-T1-GE3
RFQ
RFQ
3,133
In-stock
Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 1.7 mOhm @ 20A, 10V 2.3V @ 250µA 113nC @ 10V 4930pF @ 20V 4.5V, 10V ±20V
SIR640DP-T1-GE3
RFQ
RFQ
902
In-stock
Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 1.7 mOhm @ 20A, 10V 2.3V @ 250µA 113nC @ 10V 4930pF @ 20V 4.5V, 10V ±20V