- Series :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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66 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFQ |
740
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A PS-8 | U-MOSV-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 30V | 11A (Ta) | 12.9 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 20nC @ 10V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,310
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A PS-8 | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 30V | 11A (Ta) | 12.9 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 20nC @ 10V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,139
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A PS-8 | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 30V | 11A (Ta) | 12.9 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 20nC @ 10V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,026
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,056
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,151
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,403
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,314
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,495
In-stock
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Infineon Technologies | MOSFET N-CH 20V 92A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,921
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,492
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,356
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,516
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,568
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
890
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,333
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,313
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
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RFQ |
3,807
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,748
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 24A SOP-8 ADV | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 30W (Tc) | N-Channel | - | 30V | 24A (Ta) | 11 mOhm @ 12A, 10V | 2.5V @ 1mA | 21nC @ 10V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
3,224
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 20A SOP-8 ADV | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 30W (Tc) | N-Channel | - | 30V | 21A (Ta) | 12.9 mOhm @ 11A, 10V | 2.5V @ 1mA | 21nC @ 10V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,640
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,692
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
740
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A PS-8 | U-MOSV-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 30V | 11A (Ta) | 12.9 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 20nC @ 10V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,310
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A PS-8 | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 30V | 11A (Ta) | 12.9 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 20nC @ 10V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,139
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A PS-8 | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 30V | 11A (Ta) | 12.9 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 20nC @ 10V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,026
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,056
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,151
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,403
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,314
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 92A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 79W (Tc) | N-Channel | - | 20V | 92A (Tc) | 6 mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
