- Packaging :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
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- Current - Continuous Drain (Id) @ 25°C :
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12 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
1,121
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 40V | 82A (Tc) | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,826
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 87W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,121
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 40V | 82A (Tc) | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
1,826
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 87W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,527
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 40V 58A DPAK | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 40V | 58A (Tc) | 3.1 mOhm @ 29A, 10V | 2.4V @ 500µA | 60nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
669
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 40V 58A DPAK | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 40V | 58A (Tc) | 3.1 mOhm @ 29A, 10V | 2.4V @ 500µA | 60nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,449
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 40V 58A DPAK | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 40V | 58A (Tc) | 3.1 mOhm @ 29A, 10V | 2.4V @ 500µA | 60nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,121
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 40V | 82A (Tc) | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,826
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 87W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
2,527
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 40V 58A DPAK | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 40V | 58A (Tc) | 3.1 mOhm @ 29A, 10V | 2.4V @ 500µA | 60nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
669
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 40V 58A DPAK | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 40V | 58A (Tc) | 3.1 mOhm @ 29A, 10V | 2.4V @ 500µA | 60nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
3,449
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 40V 58A DPAK | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 40V | 58A (Tc) | 3.1 mOhm @ 29A, 10V | 2.4V @ 500µA | 60nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
