- Manufacture :
- Series :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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9 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
3,250
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 6.1A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 60V | 6.1A (Ta) | 59 mOhm @ 3.1A, 10V | 2.3V @ 100µA | 12nC @ 10V | 830pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,250
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 6.1A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 60V | 6.1A (Ta) | 59 mOhm @ 3.1A, 10V | 2.3V @ 100µA | 12nC @ 10V | 830pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,170
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 20A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.9W (Ta), 29.8W (Tc) | N-Channel | - | 20V | 20A (Tc) | 8.3 mOhm @ 17.2A, 10V | 2.5V @ 250µA | 23nC @ 10V | 830pF @ 10V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,824
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 20A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.9W (Ta), 29.8W (Tc) | N-Channel | - | 20V | 20A (Tc) | 8.3 mOhm @ 17.2A, 10V | 2.5V @ 250µA | 23nC @ 10V | 830pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,884
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 20A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.9W (Ta), 29.8W (Tc) | N-Channel | - | 20V | 20A (Tc) | 8.3 mOhm @ 17.2A, 10V | 2.5V @ 250µA | 23nC @ 10V | 830pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,250
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 6.1A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 60V | 6.1A (Ta) | 59 mOhm @ 3.1A, 10V | 2.3V @ 100µA | 12nC @ 10V | 830pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,170
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 20A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.9W (Ta), 29.8W (Tc) | N-Channel | - | 20V | 20A (Tc) | 8.3 mOhm @ 17.2A, 10V | 2.5V @ 250µA | 23nC @ 10V | 830pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,824
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 20A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.9W (Ta), 29.8W (Tc) | N-Channel | - | 20V | 20A (Tc) | 8.3 mOhm @ 17.2A, 10V | 2.5V @ 250µA | 23nC @ 10V | 830pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,884
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 20A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.9W (Ta), 29.8W (Tc) | N-Channel | - | 20V | 20A (Tc) | 8.3 mOhm @ 17.2A, 10V | 2.5V @ 250µA | 23nC @ 10V | 830pF @ 10V | 4.5V, 10V | ±20V | |||
