Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PSMN4R3-100ES,127
Per Unit
$3.24
RFQ
RFQ
1,150
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 120A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 338W (Tc) N-Channel 100V 120A (Tc) 4.3 mOhm @ 25A, 10V 4V @ 1mA 170nC @ 10V 9900pF @ 50V 4.5V, 10V ±20V
PSMN4R3-100ES,127
Per Unit
$3.24
RFQ
RFQ
1,150
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 120A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 338W (Tc) N-Channel 100V 120A (Tc) 4.3 mOhm @ 25A, 10V 4V @ 1mA 170nC @ 10V 9900pF @ 50V 4.5V, 10V ±20V