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21 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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RFQ |
3,539
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 16A 8SOP-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 25W (Tc) | N-Channel | - | 30V | 16A (Ta) | 11.4 mOhm @ 8A, 10V | 2.3V @ 200µA | 20nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,539
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 16A 8SOP-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 25W (Tc) | N-Channel | - | 30V | 16A (Ta) | 11.4 mOhm @ 8A, 10V | 2.3V @ 200µA | 20nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,479
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 25A 8TSON | U-MOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 25A (Ta) | 6.8 mOhm @ 12.5A, 10V | 2.5V @ 1A | 30nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±25V | |||
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RFQ |
2,443
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 25A 8TSON | U-MOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 25A (Ta) | 6.8 mOhm @ 12.5A, 10V | 2.5V @ 1A | 30nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±25V | |||
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RFQ |
1,148
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 25A 8TSON | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 25A (Ta) | 6.8 mOhm @ 12.5A, 10V | 2.5V @ 1A | 30nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±25V | |||
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RFQ |
1,150
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 35A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.2W (Ta), 36W (Tc) | N-Channel | - | 20V | 35A (Tc) | 4.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,276
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 35A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.2W (Ta), 36W (Tc) | N-Channel | - | 20V | 35A (Tc) | 4.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,722
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 35A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.2W (Ta), 36W (Tc) | N-Channel | - | 20V | 35A (Tc) | 4.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,606
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 35A PPAK 1212-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.8W (Ta), 52W (Tc) | N-Channel | - | 20V | 35A (Tc) | 4.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,622
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 35A PPAK 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.8W (Ta), 52W (Tc) | N-Channel | - | 20V | 35A (Tc) | 4.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,202
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 35A PPAK 1212-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.8W (Ta), 52W (Tc) | N-Channel | - | 20V | 35A (Tc) | 4.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,539
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 16A 8SOP-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 25W (Tc) | N-Channel | - | 30V | 16A (Ta) | 11.4 mOhm @ 8A, 10V | 2.3V @ 200µA | 20nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,479
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 25A 8TSON | U-MOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 25A (Ta) | 6.8 mOhm @ 12.5A, 10V | 2.5V @ 1A | 30nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±25V | |||
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RFQ |
2,443
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 25A 8TSON | U-MOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 25A (Ta) | 6.8 mOhm @ 12.5A, 10V | 2.5V @ 1A | 30nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±25V | |||
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RFQ |
1,148
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 25A 8TSON | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 25A (Ta) | 6.8 mOhm @ 12.5A, 10V | 2.5V @ 1A | 30nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±25V | |||
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RFQ |
1,150
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 35A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.2W (Ta), 36W (Tc) | N-Channel | - | 20V | 35A (Tc) | 4.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,276
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 35A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.2W (Ta), 36W (Tc) | N-Channel | - | 20V | 35A (Tc) | 4.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,722
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 35A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.2W (Ta), 36W (Tc) | N-Channel | - | 20V | 35A (Tc) | 4.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,606
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 35A PPAK 1212-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.8W (Ta), 52W (Tc) | N-Channel | - | 20V | 35A (Tc) | 4.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,622
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 35A PPAK 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.8W (Ta), 52W (Tc) | N-Channel | - | 20V | 35A (Tc) | 4.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,202
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 35A PPAK 1212-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.8W (Ta), 52W (Tc) | N-Channel | - | 20V | 35A (Tc) | 4.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V |