- Manufacture :
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- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
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24 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFQ |
1,780
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 20A TO252 | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 39.5W (Tc) | N-Channel | - | 20V | 20A (Ta) | 14 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,265
In-stock
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Vishay Siliconix | MOSFET N-CH 20V DPAK | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 6.5W (Ta), 39.5W (Tc) | N-Channel | - | 20V | - | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,352
In-stock
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Vishay Siliconix | MOSFET N-CH 20V DPAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 6.5W (Ta), 39.5W (Tc) | N-Channel | - | 20V | - | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,835
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V DPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 6.5W (Ta), 39.5W (Tc) | N-Channel | - | 20V | - | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,780
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 20A TO252 | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 39.5W (Tc) | N-Channel | - | 20V | 20A (Ta) | 14 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,469
In-stock
|
Vishay Siliconix | MOSFET N-CH 22V 49A TO252 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 6.5W (Ta), 39.5W (Tc) | N-Channel | - | 22V | 49A (Tc) | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,555
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,848
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,254
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,265
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V DPAK | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 6.5W (Ta), 39.5W (Tc) | N-Channel | - | 20V | - | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,352
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V DPAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 6.5W (Ta), 39.5W (Tc) | N-Channel | - | 20V | - | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,835
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V DPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 6.5W (Ta), 39.5W (Tc) | N-Channel | - | 20V | - | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,469
In-stock
|
Vishay Siliconix | MOSFET N-CH 22V 49A TO252 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 6.5W (Ta), 39.5W (Tc) | N-Channel | - | 22V | 49A (Tc) | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,555
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,848
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,254
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
1,780
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 20A TO252 | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 39.5W (Tc) | N-Channel | - | 20V | 20A (Ta) | 14 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
2,265
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V DPAK | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 6.5W (Ta), 39.5W (Tc) | N-Channel | - | 20V | - | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
2,352
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V DPAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 6.5W (Ta), 39.5W (Tc) | N-Channel | - | 20V | - | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
2,835
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V DPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 6.5W (Ta), 39.5W (Tc) | N-Channel | - | 20V | - | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
2,469
In-stock
|
Vishay Siliconix | MOSFET N-CH 22V 49A TO252 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 6.5W (Ta), 39.5W (Tc) | N-Channel | - | 22V | 49A (Tc) | 9.5 mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,555
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,848
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,254
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
