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9 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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RFQ |
972
In-stock
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Infineon Technologies | MOSFET N-CH 40V 209A | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 104W (Tc) | N-Channel | - | 40V | 209A (Tc) | 1.25 mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | 6904pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,929
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 209A | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 104W (Tc) | N-Channel | - | 40V | 209A (Tc) | 1.25 mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | 6904pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,698
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 209A | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 104W (Tc) | N-Channel | - | 40V | 209A (Tc) | 1.25 mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | 6904pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
972
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 209A | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 104W (Tc) | N-Channel | - | 40V | 209A (Tc) | 1.25 mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | 6904pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,929
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 209A | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 104W (Tc) | N-Channel | - | 40V | 209A (Tc) | 1.25 mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | 6904pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,698
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 209A | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 104W (Tc) | N-Channel | - | 40V | 209A (Tc) | 1.25 mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | 6904pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
972
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 209A | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 104W (Tc) | N-Channel | - | 40V | 209A (Tc) | 1.25 mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | 6904pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,929
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 209A | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 104W (Tc) | N-Channel | - | 40V | 209A (Tc) | 1.25 mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | 6904pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,698
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 209A | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 104W (Tc) | N-Channel | - | 40V | 209A (Tc) | 1.25 mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | 6904pF @ 25V | 4.5V, 10V | ±20V | |||
