- Manufacture :
- Part Status :
- Packaging :
- Operating Temperature :
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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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6 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
2,741
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 235A 5DFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 3.8W (Ta), 167W (Tc) | N-Channel | - | 60V | 235A (Tc) | 1.5 mOhm @ 50A, 10V | 2V @ 250µA | 41nC @ 4.5V | 6660pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,400
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 4.5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,741
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 235A 5DFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 3.8W (Ta), 167W (Tc) | N-Channel | - | 60V | 235A (Tc) | 1.5 mOhm @ 50A, 10V | 2V @ 250µA | 41nC @ 4.5V | 6660pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,400
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 4.5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
2,741
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 235A 5DFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 3.8W (Ta), 167W (Tc) | N-Channel | - | 60V | 235A (Tc) | 1.5 mOhm @ 50A, 10V | 2V @ 250µA | 41nC @ 4.5V | 6660pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,400
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 4.5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
