- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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50 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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RFQ |
903
In-stock
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NXP USA Inc. | MOSFET N-CH 55V 100A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 158W (Tc) | N-Channel | 55V | 100A (Tc) | 7 mOhm @ 25A, 10V | 2.8V @ 1mA | 82nC @ 10V | 5160pF @ 25V | 4.5V, 10V | ±16V | |||
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RFQ |
3,058
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A 5X6 PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 156W (Tc) | N-Channel | 40V | 29A (Ta), 100A (Tc) | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | 4730pF @ 25V | 4.5V, 10V | ±16V | |||
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RFQ |
2,129
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A 5X6 PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 156W (Tc) | N-Channel | 40V | 29A (Ta), 100A (Tc) | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | 4730pF @ 25V | 4.5V, 10V | ±16V | |||
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RFQ |
2,046
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A SOP8 2-6J1B | U-MOSVI-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | 30V | 18A (Ta) | 3.2 mOhm @ 9A, 10V | 2.3V @ 1mA | 82nC @ 10V | 7800pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,773
In-stock
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ON Semiconductor | MOSFET N-CH 30V 21A 8-SOIC | PowerTrench® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 30V | 21A (Ta) | 3.7 mOhm @ 21A, 10V | 3V @ 250µA | 82nC @ 10V | 4040pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,808
In-stock
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ON Semiconductor | MOSFET N-CH 30V 21A 8-SOIC | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 30V | 21A (Ta) | 3.7 mOhm @ 21A, 10V | 3V @ 250µA | 82nC @ 10V | 4040pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,266
In-stock
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ON Semiconductor | MOSFET N-CH 30V 21A 8-SOIC | PowerTrench® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 30V | 21A (Ta) | 3.7 mOhm @ 21A, 10V | 3V @ 250µA | 82nC @ 10V | 4040pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,471
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A SOP8 2-6J1B | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | 30V | 18A (Ta) | 3.2 mOhm @ 9A, 10V | 2.3V @ 1mA | 82nC @ 10V | 7800pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,346
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A SOP8 2-6J1B | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | 30V | 18A (Ta) | 3.2 mOhm @ 9A, 10V | 2.3V @ 1mA | 82nC @ 10V | 7800pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,065
In-stock
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Infineon Technologies | MOSFET N-CH 25V 170A WDSON | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.8W (Ta), 57W (Tc) | N-Channel | 25V | 170A (Tc) | 1.2 mOhm @ 30A, 10V | 2V @ 250µA | 82nC @ 10V | 5852pF @ 12V | 4.5V, 10V | ±20V | |||
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RFQ |
903
In-stock
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NXP USA Inc. | MOSFET N-CH 55V 100A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 158W (Tc) | N-Channel | 55V | 100A (Tc) | 7 mOhm @ 25A, 10V | 2.8V @ 1mA | 82nC @ 10V | 5160pF @ 25V | 4.5V, 10V | ±16V | |||
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RFQ |
2,385
In-stock
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ON Semiconductor | MOSFET N-CH 25V 54A SO8FL | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 5-DFN (5x6) (8-SOFL) | 3.2W (Ta), 125W (Tc) | N-Channel | 25V | 54A (Ta), 334A (Tc) | 0.7 mOhm @ 30A, 10V | 2.1V @ 250µA | 82nC @ 10V | 5538pF @ 12V | 4.5V, 10V | ±20V | |||
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RFQ |
1,525
In-stock
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ON Semiconductor | NFET SO8FL 30V 1.15MO | Automotive, AEC-Q101 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 3.75W (Ta), 115W (Tc) | N-Channel | 30V | 43A (Ta), 241A (Tc) | 1.15 mOhm @ 30A, 10V | 2.2V @ 250µA | 82nC @ 10V | 5780pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,058
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A 5X6 PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 156W (Tc) | N-Channel | 40V | 29A (Ta), 100A (Tc) | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | 4730pF @ 25V | 4.5V, 10V | ±16V | |||
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RFQ |
2,129
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A 5X6 PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 156W (Tc) | N-Channel | 40V | 29A (Ta), 100A (Tc) | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | 4730pF @ 25V | 4.5V, 10V | ±16V | |||
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RFQ |
2,046
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A SOP8 2-6J1B | U-MOSVI-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | 30V | 18A (Ta) | 3.2 mOhm @ 9A, 10V | 2.3V @ 1mA | 82nC @ 10V | 7800pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,773
In-stock
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ON Semiconductor | MOSFET N-CH 30V 21A 8-SOIC | PowerTrench® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 30V | 21A (Ta) | 3.7 mOhm @ 21A, 10V | 3V @ 250µA | 82nC @ 10V | 4040pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,808
In-stock
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ON Semiconductor | MOSFET N-CH 30V 21A 8-SOIC | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 30V | 21A (Ta) | 3.7 mOhm @ 21A, 10V | 3V @ 250µA | 82nC @ 10V | 4040pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,266
In-stock
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ON Semiconductor | MOSFET N-CH 30V 21A 8-SOIC | PowerTrench® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 30V | 21A (Ta) | 3.7 mOhm @ 21A, 10V | 3V @ 250µA | 82nC @ 10V | 4040pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,471
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A SOP8 2-6J1B | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | 30V | 18A (Ta) | 3.2 mOhm @ 9A, 10V | 2.3V @ 1mA | 82nC @ 10V | 7800pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,346
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A SOP8 2-6J1B | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | 30V | 18A (Ta) | 3.2 mOhm @ 9A, 10V | 2.3V @ 1mA | 82nC @ 10V | 7800pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,493
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A 8-PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 3.6W (Ta) | N-Channel | 40V | 29A (Ta), 100A (Tc) | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | 4730pF @ 25V | 4.5V, 10V | ±16V | |||
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RFQ |
2,591
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A 8-PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 3.6W (Ta) | N-Channel | 40V | 29A (Ta), 100A (Tc) | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | 4730pF @ 25V | 4.5V, 10V | ±16V | |||
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RFQ |
1,460
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A 8-PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 3.6W (Ta), 156W (Tc) | N-Channel | 40V | 29A (Ta), 100A (Tc) | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | 4730pF @ 25V | 4.5V, 10V | ±16V | |||
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RFQ |
2,192
In-stock
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ON Semiconductor | MOSFET N-CH 25V 54A SO8FL | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 5-DFN (5x6) (8-SOFL) | 3.2W (Ta), 125W (Tc) | N-Channel | 25V | 54A (Ta), 334A (Tc) | 0.7 mOhm @ 30A, 10V | 2.1V @ 250µA | 82nC @ 10V | 5538pF @ 12V | 4.5V, 10V | ±20V | |||
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RFQ |
3,065
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 170A WDSON | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.8W (Ta), 57W (Tc) | N-Channel | 25V | 170A (Tc) | 1.2 mOhm @ 30A, 10V | 2V @ 250µA | 82nC @ 10V | 5852pF @ 12V | 4.5V, 10V | ±20V | |||
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RFQ |
2,385
In-stock
|
ON Semiconductor | MOSFET N-CH 25V 54A SO8FL | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 5-DFN (5x6) (8-SOFL) | 3.2W (Ta), 125W (Tc) | N-Channel | 25V | 54A (Ta), 334A (Tc) | 0.7 mOhm @ 30A, 10V | 2.1V @ 250µA | 82nC @ 10V | 5538pF @ 12V | 4.5V, 10V | ±20V | |||
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RFQ |
1,525
In-stock
|
ON Semiconductor | NFET SO8FL 30V 1.15MO | Automotive, AEC-Q101 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 3.75W (Ta), 115W (Tc) | N-Channel | 30V | 43A (Ta), 241A (Tc) | 1.15 mOhm @ 30A, 10V | 2.2V @ 250µA | 82nC @ 10V | 5780pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,493
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A 8-PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 3.6W (Ta) | N-Channel | 40V | 29A (Ta), 100A (Tc) | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | 4730pF @ 25V | 4.5V, 10V | ±16V | |||
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RFQ |
2,591
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A 8-PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 3.6W (Ta) | N-Channel | 40V | 29A (Ta), 100A (Tc) | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | 4730pF @ 25V | 4.5V, 10V | ±16V |