- Part Status :
- Operating Temperature :
- Mounting Type :
- Power Dissipation (Max) :
- FET Type :
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61 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
1,071
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5 mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | 5000pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,658
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.7 mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | 5000pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,817
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5 mOhm @ 80A, 10V | 2V @ 230µA | 190nC @ 10V | 6640pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,798
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A D2PAK | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5 mOhm @ 80A, 10V | 2V @ 230µA | 190nC @ 10V | 6640pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,467
In-stock
|
Renesas Electronics America | MOSFET P-CH 60V 83A TO-263 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 150W (Tc) | P-Channel | - | 60V | 83A (Tc) | 8.8 mOhm @ 41.5A, 10V | 2.5V @ 1mA | 190nC @ 10V | 10100pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,465
In-stock
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Renesas Electronics America | MOSFET P-CH 60V 83A TO-263 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 150W (Tc) | P-Channel | - | 60V | 83A (Tc) | 8.8 mOhm @ 41.5A, 10V | 2.5V @ 1mA | 190nC @ 10V | 10100pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,952
In-stock
|
Renesas Electronics America | MOSFET P-CH 60V 83A TO-263 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 150W (Tc) | P-Channel | - | 60V | 83A (Tc) | 8.8 mOhm @ 41.5A, 10V | 2.5V @ 1mA | 190nC @ 10V | 10100pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,965
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 120A TO263 | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 375W (Tc) | P-Channel | - | 100V | 120A (Tc) | 10.1 mOhm @ 30A, 10V | 2.5V @ 250µA | 190nC @ 10V | 9000pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,430
In-stock
|
Infineon Technologies | MOSFET N-CH TO263-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 158W (Tc) | N-Channel | - | 40V | 120A (Tc) | 1.7 mOhm @ 100A, 10V | 2.2V @ 110µA | 190nC @ 10V | 14560pF @ 25V | 4.5V, 10V | +20V, -16V | |||
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RFQ |
2,471
In-stock
|
Infineon Technologies | MOSFET N-CH TO263-7 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 167W (Tc) | N-Channel | - | 40V | 160A (Tc) | 1.5 mOhm @ 100A, 10V | 2.2V @ 110µA | 190nC @ 10V | 14950pF @ 25V | 4.5V, 10V | +20V, -16V | |||
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RFQ |
1,734
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5 mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | 5000pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,304
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 45A 8SOP-ADV | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | P-Channel | - | 30V | 45A (Ta) | 3 mOhm @ 22.5A, 10V | 2V @ 1mA | 190nC @ 10V | 7420pF @ 10V | 4.5V, 10V | +20V, -25V | |||
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|
RFQ |
1,071
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5 mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | 5000pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,658
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.7 mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | 5000pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,817
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5 mOhm @ 80A, 10V | 2V @ 230µA | 190nC @ 10V | 6640pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,798
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A D2PAK | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5 mOhm @ 80A, 10V | 2V @ 230µA | 190nC @ 10V | 6640pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,467
In-stock
|
Renesas Electronics America | MOSFET P-CH 60V 83A TO-263 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 150W (Tc) | P-Channel | - | 60V | 83A (Tc) | 8.8 mOhm @ 41.5A, 10V | 2.5V @ 1mA | 190nC @ 10V | 10100pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,465
In-stock
|
Renesas Electronics America | MOSFET P-CH 60V 83A TO-263 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 150W (Tc) | P-Channel | - | 60V | 83A (Tc) | 8.8 mOhm @ 41.5A, 10V | 2.5V @ 1mA | 190nC @ 10V | 10100pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,952
In-stock
|
Renesas Electronics America | MOSFET P-CH 60V 83A TO-263 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 150W (Tc) | P-Channel | - | 60V | 83A (Tc) | 8.8 mOhm @ 41.5A, 10V | 2.5V @ 1mA | 190nC @ 10V | 10100pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
607
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 120A TO263 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 375W (Tc) | P-Channel | - | 100V | 120A (Tc) | - | 2.5V @ 250µA | 190nC @ 10V | 7000pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,988
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 120A TO263 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 375W (Tc) | P-Channel | - | 100V | 120A (Tc) | - | 2.5V @ 250µA | 190nC @ 10V | 7000pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,358
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 120A TO263 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 375W (Tc) | P-Channel | - | 100V | 120A (Tc) | 10.1 mOhm @ 30A, 10V | 2.5V @ 250µA | 190nC @ 10V | 7000pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,965
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 120A TO263 | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 375W (Tc) | P-Channel | - | 100V | 120A (Tc) | 10.1 mOhm @ 30A, 10V | 2.5V @ 250µA | 190nC @ 10V | 9000pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,430
In-stock
|
Infineon Technologies | MOSFET N-CH TO263-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 158W (Tc) | N-Channel | - | 40V | 120A (Tc) | 1.7 mOhm @ 100A, 10V | 2.2V @ 110µA | 190nC @ 10V | 14560pF @ 25V | 4.5V, 10V | +20V, -16V | |||
|
|
RFQ |
2,471
In-stock
|
Infineon Technologies | MOSFET N-CH TO263-7 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 167W (Tc) | N-Channel | - | 40V | 160A (Tc) | 1.5 mOhm @ 100A, 10V | 2.2V @ 110µA | 190nC @ 10V | 14950pF @ 25V | 4.5V, 10V | +20V, -16V | |||
|
|
|
RFQ |
1,734
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5 mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | 5000pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,304
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 45A 8SOP-ADV | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | P-Channel | - | 30V | 45A (Ta) | 3 mOhm @ 22.5A, 10V | 2V @ 1mA | 190nC @ 10V | 7420pF @ 10V | 4.5V, 10V | +20V, -25V | |||
|
|
RFQ |
607
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 120A TO263 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 375W (Tc) | P-Channel | - | 100V | 120A (Tc) | - | 2.5V @ 250µA | 190nC @ 10V | 7000pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,988
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 120A TO263 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 375W (Tc) | P-Channel | - | 100V | 120A (Tc) | - | 2.5V @ 250µA | 190nC @ 10V | 7000pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,358
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 120A TO263 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 375W (Tc) | P-Channel | - | 100V | 120A (Tc) | 10.1 mOhm @ 30A, 10V | 2.5V @ 250µA | 190nC @ 10V | 7000pF @ 50V | 4.5V, 10V | ±20V | |||
