- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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39 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
2,387
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.9 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,830
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A D2PAK | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.6 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,478
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A TO-220AB | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.9 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,535
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A TO-220AB | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.9 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,420
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 65A SO8FL | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 5-DFN (5x6) (8-SOFL) | 1.63W (Ta), 22.73W (Tc) | N-Channel | - | 30V | 17.5A (Ta), 65A (Tc) | 3.4 mOhm @ 30A, 10V | 2.3V @ 1mA | 30.5nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
799
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 16A POWERPAK1212 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 41W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 16A (Tc) | 9.5 mOhm @ 10A, 10V | 2.3V @ 250µA | 30.5nC @ 10V | 1025pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,287
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 16A POWERPAK1212 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 41W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 16A (Tc) | 9.5 mOhm @ 10A, 10V | 2.3V @ 250µA | 30.5nC @ 10V | 1025pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,785
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 16A POWERPAK1212 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 41W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 16A (Tc) | 9.5 mOhm @ 10A, 10V | 2.3V @ 250µA | 30.5nC @ 10V | 1025pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,824
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A D2PAK | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.6 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,799
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A D2PAK | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.6 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,387
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.9 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,830
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A D2PAK | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.6 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,892
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A D2PAK | OptiMOS™ | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.6 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,478
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A TO-220AB | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.9 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,535
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A TO-220AB | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.9 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,420
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 65A SO8FL | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 5-DFN (5x6) (8-SOFL) | 1.63W (Ta), 22.73W (Tc) | N-Channel | - | 30V | 17.5A (Ta), 65A (Tc) | 3.4 mOhm @ 30A, 10V | 2.3V @ 1mA | 30.5nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
799
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 16A POWERPAK1212 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 41W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 16A (Tc) | 9.5 mOhm @ 10A, 10V | 2.3V @ 250µA | 30.5nC @ 10V | 1025pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,287
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 16A POWERPAK1212 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 41W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 16A (Tc) | 9.5 mOhm @ 10A, 10V | 2.3V @ 250µA | 30.5nC @ 10V | 1025pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,785
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 16A POWERPAK1212 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 41W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 16A (Tc) | 9.5 mOhm @ 10A, 10V | 2.3V @ 250µA | 30.5nC @ 10V | 1025pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,824
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A D2PAK | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.6 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,799
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A D2PAK | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.6 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,892
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A D2PAK | OptiMOS™ | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.6 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,940
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 65A SO8FL | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 5-DFN (5x6) (8-SOFL) | 1.63W (Ta), 22.73W (Tc) | N-Channel | - | 30V | 17.5A (Ta), 65A (Tc) | 3.4 mOhm @ 30A, 10V | 2.3V @ 1mA | 30.5nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,809
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 65A SO8FL | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 5-DFN (5x6) (8-SOFL) | 1.63W (Ta), 22.73W (Tc) | N-Channel | - | 30V | 17.5A (Ta), 65A (Tc) | 3.4 mOhm @ 30A, 10V | 2.3V @ 1mA | 30.5nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,544
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 65A SO8FL | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 5-DFN (5x6) (8-SOFL) | 1.63W (Ta), 22.73W (Tc) | N-Channel | - | 30V | 17.5A (Ta), 65A (Tc) | 3.4 mOhm @ 30A, 10V | 2.3V @ 1mA | 30.5nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,387
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.9 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,830
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A D2PAK | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.6 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,478
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A TO-220AB | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.9 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,535
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 42A TO-220AB | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 83W (Tc) | N-Channel | - | 30V | 42A (Tc) | 12.9 mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,420
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 65A SO8FL | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 5-DFN (5x6) (8-SOFL) | 1.63W (Ta), 22.73W (Tc) | N-Channel | - | 30V | 17.5A (Ta), 65A (Tc) | 3.4 mOhm @ 30A, 10V | 2.3V @ 1mA | 30.5nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
