- Series :
- Packaging :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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14 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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RFQ |
1,430
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 100V | 1.8A (Ta) | 230 mOhm @ 1.8A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | 329pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,649
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 100V | 1.8A (Ta) | 230 mOhm @ 1.8A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | 329pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
900
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 100V | 1.8A (Ta) | 230 mOhm @ 1.8A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | 329pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,454
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 2A 6TSOP | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 | 2W (Ta) | N-Channel | 100V | 2A (Ta) | 220 mOhm @ 2A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | 329pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,544
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 30V 52A 8PDFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PDFN (3x3) | 37W (Tc) | N-Channel | 30V | 52A (Tc) | 8.5 mOhm @ 13A, 10V | 2.5V @ 250µA | 14.3nC @ 10V | 817pF @ 15V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
1,102
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 30V 52A 8PDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PDFN (3x3) | 37W (Tc) | N-Channel | 30V | 52A (Tc) | 8.5 mOhm @ 13A, 10V | 2.5V @ 250µA | 14.3nC @ 10V | 817pF @ 15V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,105
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 30V 52A 8PDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PDFN (3x3) | 37W (Tc) | N-Channel | 30V | 52A (Tc) | 8.5 mOhm @ 13A, 10V | 2.5V @ 250µA | 14.3nC @ 10V | 817pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,430
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 100V | 1.8A (Ta) | 230 mOhm @ 1.8A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | 329pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,649
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 100V | 1.8A (Ta) | 230 mOhm @ 1.8A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | 329pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
900
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 100V | 1.8A (Ta) | 230 mOhm @ 1.8A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | 329pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,454
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 2A 6TSOP | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 | 2W (Ta) | N-Channel | 100V | 2A (Ta) | 220 mOhm @ 2A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | 329pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,544
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 30V 52A 8PDFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PDFN (3x3) | 37W (Tc) | N-Channel | 30V | 52A (Tc) | 8.5 mOhm @ 13A, 10V | 2.5V @ 250µA | 14.3nC @ 10V | 817pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,102
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 30V 52A 8PDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PDFN (3x3) | 37W (Tc) | N-Channel | 30V | 52A (Tc) | 8.5 mOhm @ 13A, 10V | 2.5V @ 250µA | 14.3nC @ 10V | 817pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,105
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 30V 52A 8PDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PDFN (3x3) | 37W (Tc) | N-Channel | 30V | 52A (Tc) | 8.5 mOhm @ 13A, 10V | 2.5V @ 250µA | 14.3nC @ 10V | 817pF @ 15V | 4.5V, 10V | ±20V | |||
