- Series :
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- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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18 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
635
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 9A UDFN6B | U-MOSVII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 9A (Ta) | 19.5 mOhm @ 4A, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | 620pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,368
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 9A UDFN6B | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 9A (Ta) | 19.5 mOhm @ 4A, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | 620pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,405
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 9A UDFN6B | U-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 9A (Ta) | 19.5 mOhm @ 4A, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | 620pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,514
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.2A 6TSOP | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.2A (Ta) | 19 mOhm @ 8.2A, 10V | 2.35V @ 25µA | 4.8nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
718
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.2A 6TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.2A (Ta) | 19 mOhm @ 8.2A, 10V | 2.35V @ 25µA | 4.8nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,225
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 8.2A 6TSOP | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.2A (Ta) | 19 mOhm @ 8.2A, 10V | 2.35V @ 25µA | 4.8nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,351
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 3.6A SOT-23-3 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | P-Channel | - | 30V | 3.6A (Ta) | 64 mOhm @ 3.6A, 10V | 2.4V @ 10µA | 4.8nC @ 4.5V | 388pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,816
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 3.6A SOT-23-3 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | P-Channel | - | 30V | 3.6A (Ta) | 64 mOhm @ 3.6A, 10V | 2.4V @ 10µA | 4.8nC @ 4.5V | 388pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,050
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 3.6A SOT-23-3 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | P-Channel | - | 30V | 3.6A (Ta) | 64 mOhm @ 3.6A, 10V | 2.4V @ 10µA | 4.8nC @ 4.5V | 388pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
635
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 9A UDFN6B | U-MOSVII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 9A (Ta) | 19.5 mOhm @ 4A, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | 620pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,368
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 9A UDFN6B | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 9A (Ta) | 19.5 mOhm @ 4A, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | 620pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,405
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 9A UDFN6B | U-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 9A (Ta) | 19.5 mOhm @ 4A, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | 620pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,514
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 8.2A 6TSOP | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.2A (Ta) | 19 mOhm @ 8.2A, 10V | 2.35V @ 25µA | 4.8nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
718
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 8.2A 6TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.2A (Ta) | 19 mOhm @ 8.2A, 10V | 2.35V @ 25µA | 4.8nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,225
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 8.2A 6TSOP | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.2A (Ta) | 19 mOhm @ 8.2A, 10V | 2.35V @ 25µA | 4.8nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,351
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 3.6A SOT-23-3 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | P-Channel | - | 30V | 3.6A (Ta) | 64 mOhm @ 3.6A, 10V | 2.4V @ 10µA | 4.8nC @ 4.5V | 388pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,816
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 3.6A SOT-23-3 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | P-Channel | - | 30V | 3.6A (Ta) | 64 mOhm @ 3.6A, 10V | 2.4V @ 10µA | 4.8nC @ 4.5V | 388pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,050
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 3.6A SOT-23-3 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | P-Channel | - | 30V | 3.6A (Ta) | 64 mOhm @ 3.6A, 10V | 2.4V @ 10µA | 4.8nC @ 4.5V | 388pF @ 25V | 4.5V, 10V | ±20V | |||
