- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
69 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||||
|
|
RFQ |
1,331
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 60A PPAK SO-8 | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 6.25W (Ta), 104W (Tc) | N-Channel | - | 40V | 60A (Tc) | 2.1 mOhm @ 20A, 10V | 2.3V @ 250µA | 86nC @ 10V | 3800pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,865
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 50A D2PAK | UltraFET™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,165
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 50A D2PAK | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
3,223
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 50A TO-220AB | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
1,644
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 50A D2PAK | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
3,066
In-stock
|
Diodes Incorporated | MOSFET NCH 30V 17.6A POWERDI | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 | 900mW (Ta) | N-Channel | - | 30V | 17.6A (Ta), 62A (Tc) | 4.4 mOhm @ 13.5A, 10V | 2.3V @ 250µA | 86nC @ 10V | 3690pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,929
In-stock
|
Diodes Incorporated | MOSFET NCH 30V 17.6A POWERDI | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 | 900mW (Ta) | N-Channel | - | 30V | 17.6A (Ta), 62A (Tc) | 4.4 mOhm @ 13.5A, 10V | 2.3V @ 250µA | 86nC @ 10V | 3690pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,331
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 60A PPAK SO-8 | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 6.25W (Ta), 104W (Tc) | N-Channel | - | 40V | 60A (Tc) | 2.1 mOhm @ 20A, 10V | 2.3V @ 250µA | 86nC @ 10V | 3800pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,704
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 17.6A POWERDI | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 900mW (Ta) | N-Channel | - | 30V | 17.6A (Ta) | 4.6 mOhm @ 13.5A, 10V | 2.3V @ 250µA | 86nC @ 10V | 3690pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,807
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 75V 60A TO220W | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220(W) | 140W (Tc) | N-Channel | - | 75V | 60A (Ta) | 7.8 mOhm @ 30A, 10V | 2.3V @ 1mA | 86nC @ 10V | 5450pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,287
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 14.9A 8SOIC | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.7W (Ta), 5W (Tc) | P-Channel | - | 30V | 14.9A (Tc) | 12.5 mOhm @ 10A, 10V | 2.5V @ 250µA | 86nC @ 10V | 2550pF @ 15V | 4.5V, 10V | ±25V | |||
|
|
RFQ |
1,828
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 14.9A 8SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.7W (Ta), 5W (Tc) | P-Channel | - | 30V | 14.9A (Tc) | 12.5 mOhm @ 10A, 10V | 2.5V @ 250µA | 86nC @ 10V | 2550pF @ 15V | 4.5V, 10V | ±25V | |||
|
|
RFQ |
1,659
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 14.9A 8SOIC | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.7W (Ta), 5W (Tc) | P-Channel | - | 30V | 14.9A (Tc) | 12.5 mOhm @ 10A, 10V | 2.5V @ 250µA | 86nC @ 10V | 2550pF @ 15V | 4.5V, 10V | ±25V | |||
|
|
RFQ |
1,610
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 51A D2PAK | UltraFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,634
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 51A D2PAK | UltraFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,184
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 51A D2PAK | UltraFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,865
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 50A D2PAK | UltraFET™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,165
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 50A D2PAK | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
3,223
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 50A TO-220AB | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
1,644
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 50A D2PAK | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
3,066
In-stock
|
Diodes Incorporated | MOSFET NCH 30V 17.6A POWERDI | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 | 900mW (Ta) | N-Channel | - | 30V | 17.6A (Ta), 62A (Tc) | 4.4 mOhm @ 13.5A, 10V | 2.3V @ 250µA | 86nC @ 10V | 3690pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,929
In-stock
|
Diodes Incorporated | MOSFET NCH 30V 17.6A POWERDI | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 | 900mW (Ta) | N-Channel | - | 30V | 17.6A (Ta), 62A (Tc) | 4.4 mOhm @ 13.5A, 10V | 2.3V @ 250µA | 86nC @ 10V | 3690pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,704
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 17.6A POWERDI | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 900mW (Ta) | N-Channel | - | 30V | 17.6A (Ta) | 4.6 mOhm @ 13.5A, 10V | 2.3V @ 250µA | 86nC @ 10V | 3690pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,807
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 75V 60A TO220W | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220(W) | 140W (Tc) | N-Channel | - | 75V | 60A (Ta) | 7.8 mOhm @ 30A, 10V | 2.3V @ 1mA | 86nC @ 10V | 5450pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,287
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 14.9A 8SOIC | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.7W (Ta), 5W (Tc) | P-Channel | - | 30V | 14.9A (Tc) | 12.5 mOhm @ 10A, 10V | 2.5V @ 250µA | 86nC @ 10V | 2550pF @ 15V | 4.5V, 10V | ±25V | |||
|
|
RFQ |
1,828
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 14.9A 8SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.7W (Ta), 5W (Tc) | P-Channel | - | 30V | 14.9A (Tc) | 12.5 mOhm @ 10A, 10V | 2.5V @ 250µA | 86nC @ 10V | 2550pF @ 15V | 4.5V, 10V | ±25V | |||
|
|
RFQ |
1,659
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 14.9A 8SOIC | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.7W (Ta), 5W (Tc) | P-Channel | - | 30V | 14.9A (Tc) | 12.5 mOhm @ 10A, 10V | 2.5V @ 250µA | 86nC @ 10V | 2550pF @ 15V | 4.5V, 10V | ±25V | |||
|
|
RFQ |
1,610
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 51A D2PAK | UltraFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,634
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 51A D2PAK | UltraFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,184
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 51A D2PAK | UltraFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V |