- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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27 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFQ |
2,593
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 2.2A PS-8 | U-MOSIII-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 100V | 2.2A (Ta) | 180 mOhm @ 1.1A, 10V | 2.3V @ 1mA | 7.5nC @ 10V | 360pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,593
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 2.2A PS-8 | U-MOSIII-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 100V | 2.2A (Ta) | 180 mOhm @ 1.1A, 10V | 2.3V @ 1mA | 7.5nC @ 10V | 360pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,190
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,965
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
812
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,142
In-stock
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ON Semiconductor | MOSFET N-CH 30V 6.5A 6-MLP 2X2 | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 1.9W (Ta) | N-Channel | - | 30V | 6.5A (Ta), 8A (Tc) | 23 mOhm @ 6.5A, 10V | 3V @ 250µA | 7.5nC @ 10V | 450pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,529
In-stock
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ON Semiconductor | MOSFET N-CH 30V 6.5A 6-MLP 2X2 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 1.9W (Ta) | N-Channel | - | 30V | 6.5A (Ta), 8A (Tc) | 23 mOhm @ 6.5A, 10V | 3V @ 250µA | 7.5nC @ 10V | 450pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,692
In-stock
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ON Semiconductor | MOSFET N-CH 30V 6.5A 6-MLP 2X2 | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 1.9W (Ta) | N-Channel | - | 30V | 6.5A (Ta), 8A (Tc) | 23 mOhm @ 6.5A, 10V | 3V @ 250µA | 7.5nC @ 10V | 450pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,193
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,484
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,475
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,956
In-stock
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Vishay Siliconix | MOSFET N-CH 80V 4.6A TSOP-6 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2W (Ta), 3.6W (Tc) | N-Channel | - | 80V | 4.6A (Tc) | 93 mOhm @ 3.5A, 10V | 3V @ 250µA | 7.5nC @ 10V | 195pF @ 40V | 4.5V, 10V | ±20V | |||
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RFQ |
3,466
In-stock
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Vishay Siliconix | MOSFET N-CH 80V 4.6A TSOP-6 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2W (Ta), 3.6W (Tc) | N-Channel | - | 80V | 4.6A (Tc) | 93 mOhm @ 3.5A, 10V | 3V @ 250µA | 7.5nC @ 10V | 195pF @ 40V | 4.5V, 10V | ±20V | |||
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RFQ |
1,884
In-stock
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Vishay Siliconix | MOSFET N-CH 80V 4.6A TSOP-6 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2W (Ta), 3.6W (Tc) | N-Channel | - | 80V | 4.6A (Tc) | 93 mOhm @ 3.5A, 10V | 3V @ 250µA | 7.5nC @ 10V | 195pF @ 40V | 4.5V, 10V | ±20V | |||
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RFQ |
2,593
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 2.2A PS-8 | U-MOSIII-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 100V | 2.2A (Ta) | 180 mOhm @ 1.1A, 10V | 2.3V @ 1mA | 7.5nC @ 10V | 360pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,190
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,965
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
812
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,142
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 6.5A 6-MLP 2X2 | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 1.9W (Ta) | N-Channel | - | 30V | 6.5A (Ta), 8A (Tc) | 23 mOhm @ 6.5A, 10V | 3V @ 250µA | 7.5nC @ 10V | 450pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,529
In-stock
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ON Semiconductor | MOSFET N-CH 30V 6.5A 6-MLP 2X2 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 1.9W (Ta) | N-Channel | - | 30V | 6.5A (Ta), 8A (Tc) | 23 mOhm @ 6.5A, 10V | 3V @ 250µA | 7.5nC @ 10V | 450pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,692
In-stock
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ON Semiconductor | MOSFET N-CH 30V 6.5A 6-MLP 2X2 | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 1.9W (Ta) | N-Channel | - | 30V | 6.5A (Ta), 8A (Tc) | 23 mOhm @ 6.5A, 10V | 3V @ 250µA | 7.5nC @ 10V | 450pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,193
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,484
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,475
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,956
In-stock
|
Vishay Siliconix | MOSFET N-CH 80V 4.6A TSOP-6 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2W (Ta), 3.6W (Tc) | N-Channel | - | 80V | 4.6A (Tc) | 93 mOhm @ 3.5A, 10V | 3V @ 250µA | 7.5nC @ 10V | 195pF @ 40V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,466
In-stock
|
Vishay Siliconix | MOSFET N-CH 80V 4.6A TSOP-6 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2W (Ta), 3.6W (Tc) | N-Channel | - | 80V | 4.6A (Tc) | 93 mOhm @ 3.5A, 10V | 3V @ 250µA | 7.5nC @ 10V | 195pF @ 40V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,884
In-stock
|
Vishay Siliconix | MOSFET N-CH 80V 4.6A TSOP-6 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 2W (Ta), 3.6W (Tc) | N-Channel | - | 80V | 4.6A (Tc) | 93 mOhm @ 3.5A, 10V | 3V @ 250µA | 7.5nC @ 10V | 195pF @ 40V | 4.5V, 10V | ±20V | |||
