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27 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFQ |
1,367
In-stock
|
STMicroelectronics | MOSFET | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | 50W (Tc) | N-Channel | - | 75V | 32A (Tc) | 25 mOhm @ 4A, 10V | 2.4V @ 250µA | 7.5nC @ 4.5V | 800pF @ 50V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
1,367
In-stock
|
STMicroelectronics | MOSFET | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | 50W (Tc) | N-Channel | - | 75V | 32A (Tc) | 25 mOhm @ 4A, 10V | 2.4V @ 250µA | 7.5nC @ 4.5V | 800pF @ 50V | 4.5V, 10V | ±20V | |||
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|
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RFQ |
1,494
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 10A 8PQFN | HEXFET® | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3.3x3.3), Power33 | 2.6W (Ta), 20W (Tc) | N-Channel | - | 30V | 10A (Ta) | 16 mOhm @ 17A, 10V | 2.35V @ 25µA | 7.5nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
906
In-stock
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Infineon Technologies | MOSFET N-CH 30V 10A 8PQFN | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3.3x3.3), Power33 | 2.6W (Ta), 20W (Tc) | N-Channel | - | 30V | 10A (Ta) | 16 mOhm @ 17A, 10V | 2.35V @ 25µA | 7.5nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
812
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 10A 8PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3.3x3.3), Power33 | 2.6W (Ta), 20W (Tc) | N-Channel | - | 30V | 10A (Ta) | 16 mOhm @ 17A, 10V | 2.35V @ 25µA | 7.5nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,894
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 30V 55A 8PDFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 54W (Tc) | N-Channel | - | 30V | 55A (Tc) | 8 mOhm @ 16A, 10V | 2.5V @ 250µA | 7.5nC @ 4.5V | 750pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,887
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 30V 55A 8PDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 54W (Tc) | N-Channel | - | 30V | 55A (Tc) | 8 mOhm @ 16A, 10V | 2.5V @ 250µA | 7.5nC @ 4.5V | 750pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
863
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 30V 55A 8PDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 54W (Tc) | N-Channel | - | 30V | 55A (Tc) | 8 mOhm @ 16A, 10V | 2.5V @ 250µA | 7.5nC @ 4.5V | 750pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,285
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 12A 6-UDFNB | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 40V | 12A (Ta) | 11.6 mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5nC @ 4.5V | 1110pF @ 20V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,394
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 12A 6-UDFNB | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 40V | 12A (Ta) | 11.6 mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5nC @ 4.5V | 1110pF @ 20V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,956
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 12A 6-UDFNB | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 40V | 12A (Ta) | 11.6 mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5nC @ 4.5V | 1110pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
2,932
In-stock
|
Toshiba Semiconductor and Storage | MOSFET NCH 30V 15A UDFNB | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 15A (Ta) | 8.9 mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | 1130pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,496
In-stock
|
Toshiba Semiconductor and Storage | MOSFET NCH 30V 15A UDFNB | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 15A (Ta) | 8.9 mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | 1130pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,250
In-stock
|
Toshiba Semiconductor and Storage | MOSFET NCH 30V 15A UDFNB | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 15A (Ta) | 8.9 mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | 1130pF @ 15V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
1,367
In-stock
|
STMicroelectronics | MOSFET | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | 50W (Tc) | N-Channel | - | 75V | 32A (Tc) | 25 mOhm @ 4A, 10V | 2.4V @ 250µA | 7.5nC @ 4.5V | 800pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,494
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 10A 8PQFN | HEXFET® | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3.3x3.3), Power33 | 2.6W (Ta), 20W (Tc) | N-Channel | - | 30V | 10A (Ta) | 16 mOhm @ 17A, 10V | 2.35V @ 25µA | 7.5nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
906
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 10A 8PQFN | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3.3x3.3), Power33 | 2.6W (Ta), 20W (Tc) | N-Channel | - | 30V | 10A (Ta) | 16 mOhm @ 17A, 10V | 2.35V @ 25µA | 7.5nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
812
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 10A 8PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3.3x3.3), Power33 | 2.6W (Ta), 20W (Tc) | N-Channel | - | 30V | 10A (Ta) | 16 mOhm @ 17A, 10V | 2.35V @ 25µA | 7.5nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,894
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 30V 55A 8PDFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 54W (Tc) | N-Channel | - | 30V | 55A (Tc) | 8 mOhm @ 16A, 10V | 2.5V @ 250µA | 7.5nC @ 4.5V | 750pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,887
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 30V 55A 8PDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 54W (Tc) | N-Channel | - | 30V | 55A (Tc) | 8 mOhm @ 16A, 10V | 2.5V @ 250µA | 7.5nC @ 4.5V | 750pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
863
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 30V 55A 8PDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 54W (Tc) | N-Channel | - | 30V | 55A (Tc) | 8 mOhm @ 16A, 10V | 2.5V @ 250µA | 7.5nC @ 4.5V | 750pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,285
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 12A 6-UDFNB | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 40V | 12A (Ta) | 11.6 mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5nC @ 4.5V | 1110pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,394
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 12A 6-UDFNB | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 40V | 12A (Ta) | 11.6 mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5nC @ 4.5V | 1110pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,956
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 12A 6-UDFNB | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 40V | 12A (Ta) | 11.6 mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5nC @ 4.5V | 1110pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,932
In-stock
|
Toshiba Semiconductor and Storage | MOSFET NCH 30V 15A UDFNB | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 15A (Ta) | 8.9 mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | 1130pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,496
In-stock
|
Toshiba Semiconductor and Storage | MOSFET NCH 30V 15A UDFNB | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 15A (Ta) | 8.9 mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | 1130pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,250
In-stock
|
Toshiba Semiconductor and Storage | MOSFET NCH 30V 15A UDFNB | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 15A (Ta) | 8.9 mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | 1130pF @ 15V | 4.5V, 10V | ±20V | |||
