- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
29 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
|
|
RFQ |
2,677
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 28A S3 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S3C | DIRECTFET™ S3C | 2.1W (Ta), 42W (Tc) | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
|
RFQ |
2,263
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 28A S3 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S3C | DIRECTFET™ S3C | 2.1W (Ta), 42W (Tc) | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
|
RFQ |
1,547
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 28A S3 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S3C | DIRECTFET™ S3C | 2.1W (Ta), 42W (Tc) | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
|
RFQ |
2,412
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 70A PQFN 5X6 | FASTIRFET™, HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.4W (Ta), 46W (Tc) | N-Channel | - | 25V | 30A (Ta), 70A (Tc) | 2.4 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
3,779
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 70A PQFN 5X6 | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.4W (Ta), 46W (Tc) | N-Channel | - | 25V | 30A (Ta), 70A (Tc) | 2.4 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
1,822
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 70A PQFN 5X6 | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.4W (Ta), 46W (Tc) | N-Channel | - | 25V | 30A (Ta), 70A (Tc) | 2.4 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,680
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,850
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,012
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
2,677
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 28A S3 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S3C | DIRECTFET™ S3C | 2.1W (Ta), 42W (Tc) | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
|
RFQ |
2,263
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 28A S3 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S3C | DIRECTFET™ S3C | 2.1W (Ta), 42W (Tc) | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
|
RFQ |
1,547
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 28A S3 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S3C | DIRECTFET™ S3C | 2.1W (Ta), 42W (Tc) | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
|
RFQ |
2,412
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 70A PQFN 5X6 | FASTIRFET™, HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.4W (Ta), 46W (Tc) | N-Channel | - | 25V | 30A (Ta), 70A (Tc) | 2.4 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
3,779
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 70A PQFN 5X6 | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.4W (Ta), 46W (Tc) | N-Channel | - | 25V | 30A (Ta), 70A (Tc) | 2.4 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
1,822
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 70A PQFN 5X6 | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.4W (Ta), 46W (Tc) | N-Channel | - | 25V | 30A (Ta), 70A (Tc) | 2.4 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,680
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,850
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,012
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
3,029
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A S3 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S3C | DIRECTFET™ S3C | 2.1W (Ta), 42W (Tc) | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
|
RFQ |
2,677
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 28A S3 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S3C | DIRECTFET™ S3C | 2.1W (Ta), 42W (Tc) | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
|
RFQ |
2,263
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 28A S3 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S3C | DIRECTFET™ S3C | 2.1W (Ta), 42W (Tc) | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
|
RFQ |
1,547
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 28A S3 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S3C | DIRECTFET™ S3C | 2.1W (Ta), 42W (Tc) | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,412
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 70A PQFN 5X6 | FASTIRFET™, HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.4W (Ta), 46W (Tc) | N-Channel | - | 25V | 30A (Ta), 70A (Tc) | 2.4 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,779
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 70A PQFN 5X6 | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.4W (Ta), 46W (Tc) | N-Channel | - | 25V | 30A (Ta), 70A (Tc) | 2.4 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,822
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 70A PQFN 5X6 | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.4W (Ta), 46W (Tc) | N-Channel | - | 25V | 30A (Ta), 70A (Tc) | 2.4 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,680
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,850
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,012
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
3,029
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A S3 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S3C | DIRECTFET™ S3C | 2.1W (Ta), 42W (Tc) | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | |||
