- Series :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
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35 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFQ |
858
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,492
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,770
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,116
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 60V | 68A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
1,556
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 87W (Tc) | N-Channel | - | 60V | 80A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
858
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,492
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,770
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,116
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 60V | 68A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
1,556
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 87W (Tc) | N-Channel | - | 60V | 80A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
3,310
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSVIII-H | Active | - | MOSFET (Metal Oxide) | 150°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 2.5W (Ta), 54W (Tc) | N-Channel | - | 100V | 66A (Ta), 45A (Tc) | 6.3 mOhm @ 22.5A, 10V | 2.5V @ 500µA | 55nC @ 10V | 4300pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
2,426
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
1,005
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
2,363
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
2,431
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 100A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 40V | 100A (Ta) | 2.3 mOhm @ 50A, 10V | 2.5V @ 500µA | 76nC @ 10V | 5490pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,644
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 100A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 40V | 100A (Ta) | 2.3 mOhm @ 50A, 10V | 2.5V @ 500µA | 76nC @ 10V | 5490pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,090
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 100A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 40V | 100A (Ta) | 2.3 mOhm @ 50A, 10V | 2.5V @ 500µA | 76nC @ 10V | 5490pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,549
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 60V 58A DPAK | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 60V | 58A (Tc) | 4.4 mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
3,326
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 60V 58A DPAK | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 60V | 58A (Tc) | 4.4 mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
1,936
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 60V 58A DPAK | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 60V | 58A (Tc) | 4.4 mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
858
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,492
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,770
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,116
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 60V | 68A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
1,556
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 87W (Tc) | N-Channel | - | 60V | 80A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
3,310
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSVIII-H | Active | - | MOSFET (Metal Oxide) | 150°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 2.5W (Ta), 54W (Tc) | N-Channel | - | 100V | 66A (Ta), 45A (Tc) | 6.3 mOhm @ 22.5A, 10V | 2.5V @ 500µA | 55nC @ 10V | 4300pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
2,426
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
1,005
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
2,363
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
2,431
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 100A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 40V | 100A (Ta) | 2.3 mOhm @ 50A, 10V | 2.5V @ 500µA | 76nC @ 10V | 5490pF @ 10V | 4.5V, 10V | ±20V | |||
