Operating Temperature :
Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TK8R2A06PL,S4X
Per Unit
$1.82
RFQ
RFQ
2,952
In-stock
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 36W (Tc) N-Channel - 60V 50A (Tc) 11.4 mOhm @ 8A, 4.5V 2.5V @ 300µA 28.4nC @ 10V 1990pF @ 25V 4.5V, 10V ±20V
TK8R2A06PL,S4X
Per Unit
$1.82
RFQ
RFQ
2,952
In-stock
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 36W (Tc) N-Channel - 60V 50A (Tc) 11.4 mOhm @ 8A, 4.5V 2.5V @ 300µA 28.4nC @ 10V 1990pF @ 25V 4.5V, 10V ±20V
Default Photo
RFQ
RFQ
2,672
In-stock
Toshiba Semiconductor and Storage MOSFET N-CHANNEL 60V 46A DPAK U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 66W (Tc) N-Channel - 60V 46A (Tc) 6.7 mOhm @ 23A, 10V 2.5V @ 300µA 26nC @ 10V 1990pF @ 30V 4.5V, 10V ±20V
Default Photo
Per Unit
$1.09
RFQ
RFQ
3,962
In-stock
Toshiba Semiconductor and Storage MOSFET N-CHANNEL 60V 46A DPAK U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 66W (Tc) N-Channel - 60V 46A (Tc) 6.7 mOhm @ 23A, 10V 2.5V @ 300µA 26nC @ 10V 1990pF @ 30V 4.5V, 10V ±20V
Default Photo
Per Unit
$0.42
RFQ
RFQ
2,113
In-stock
Toshiba Semiconductor and Storage MOSFET N-CHANNEL 60V 46A DPAK U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 66W (Tc) N-Channel - 60V 46A (Tc) 6.7 mOhm @ 23A, 10V 2.5V @ 300µA 26nC @ 10V 1990pF @ 30V 4.5V, 10V ±20V
TK8R2A06PL,S4X
Per Unit
$1.82
RFQ
RFQ
2,952
In-stock
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 36W (Tc) N-Channel - 60V 50A (Tc) 11.4 mOhm @ 8A, 4.5V 2.5V @ 300µA 28.4nC @ 10V 1990pF @ 25V 4.5V, 10V ±20V
Default Photo
RFQ
RFQ
2,672
In-stock
Toshiba Semiconductor and Storage MOSFET N-CHANNEL 60V 46A DPAK U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 66W (Tc) N-Channel - 60V 46A (Tc) 6.7 mOhm @ 23A, 10V 2.5V @ 300µA 26nC @ 10V 1990pF @ 30V 4.5V, 10V ±20V
Default Photo
Per Unit
$1.09
RFQ
RFQ
3,962
In-stock
Toshiba Semiconductor and Storage MOSFET N-CHANNEL 60V 46A DPAK U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 66W (Tc) N-Channel - 60V 46A (Tc) 6.7 mOhm @ 23A, 10V 2.5V @ 300µA 26nC @ 10V 1990pF @ 30V 4.5V, 10V ±20V
Default Photo
Per Unit
$0.42
RFQ
RFQ
2,113
In-stock
Toshiba Semiconductor and Storage MOSFET N-CHANNEL 60V 46A DPAK U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 66W (Tc) N-Channel - 60V 46A (Tc) 6.7 mOhm @ 23A, 10V 2.5V @ 300µA 26nC @ 10V 1990pF @ 30V 4.5V, 10V ±20V