- Series :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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25 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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RFQ |
1,684
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 11A 8SOP | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | P-Channel | 30V | 11A (Ta) | 10 mOhm @ 5.5A, 10V | 2V @ 500µA | 56nC @ 10V | 2400pF @ 10V | 4.5V, 10V | +20V, -25V | |||
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RFQ |
1,338
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 10A 8SOP | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Ta) | P-Channel | 30V | 10A (Ta) | 13 mOhm @ 5A, 10V | 2V @ 500µA | 64nC @ 10V | 2580pF @ 10V | 4.5V, 10V | +20V, -25V | |||
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RFQ |
3,375
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 34A 8SOP-ADV | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | P-Channel | 30V | 34A (Ta) | 4.8 mOhm @ 17A, 10V | 2V @ 500µA | 115nC @ 10V | 4800pF @ 10V | 4.5V, 10V | +20V, -25V | |||
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RFQ |
2,608
In-stock
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Microchip Technology | MOSFET N-CH 60V 350MA TO92-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 60V | 350mA (Tj) | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,624
In-stock
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Microchip Technology | MOSFET N-CH 60V 350MA TO92-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 60V | 350mA (Tj) | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
734
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 40V 9A 8SOP | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Ta) | P-Channel | 40V | 9A (Ta) | 15 mOhm @ 4.5A, 10V | 2V @ 500µA | 64nC @ 10V | 2900pF @ 10V | 4.5V, 10V | +20V, -25V | |||
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RFQ |
2,277
In-stock
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Microchip Technology | MOSFET N-CH 100V 350MA TO92-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 100V | 350mA (Tj) | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,684
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 11A 8SOP | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | P-Channel | 30V | 11A (Ta) | 10 mOhm @ 5.5A, 10V | 2V @ 500µA | 56nC @ 10V | 2400pF @ 10V | 4.5V, 10V | +20V, -25V | |||
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RFQ |
1,338
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 10A 8SOP | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Ta) | P-Channel | 30V | 10A (Ta) | 13 mOhm @ 5A, 10V | 2V @ 500µA | 64nC @ 10V | 2580pF @ 10V | 4.5V, 10V | +20V, -25V | |||
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RFQ |
3,375
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 34A 8SOP-ADV | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | P-Channel | 30V | 34A (Ta) | 4.8 mOhm @ 17A, 10V | 2V @ 500µA | 115nC @ 10V | 4800pF @ 10V | 4.5V, 10V | +20V, -25V | |||
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RFQ |
2,608
In-stock
|
Microchip Technology | MOSFET N-CH 60V 350MA TO92-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 60V | 350mA (Tj) | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,624
In-stock
|
Microchip Technology | MOSFET N-CH 60V 350MA TO92-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 60V | 350mA (Tj) | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
734
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 40V 9A 8SOP | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Ta) | P-Channel | 40V | 9A (Ta) | 15 mOhm @ 4.5A, 10V | 2V @ 500µA | 64nC @ 10V | 2900pF @ 10V | 4.5V, 10V | +20V, -25V | |||
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RFQ |
2,277
In-stock
|
Microchip Technology | MOSFET N-CH 100V 350MA TO92-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 100V | 350mA (Tj) | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,789
In-stock
|
Microchip Technology | MOSFET N-CH 100V 350MA TO92-3 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 100V | 350mA (Tj) | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,807
In-stock
|
Microchip Technology | MOSFET N-CH 60V 350MA TO92-3 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 60V | 350mA (Tj) | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,684
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 11A 8SOP | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | P-Channel | 30V | 11A (Ta) | 10 mOhm @ 5.5A, 10V | 2V @ 500µA | 56nC @ 10V | 2400pF @ 10V | 4.5V, 10V | +20V, -25V | |||
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RFQ |
1,338
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 10A 8SOP | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Ta) | P-Channel | 30V | 10A (Ta) | 13 mOhm @ 5A, 10V | 2V @ 500µA | 64nC @ 10V | 2580pF @ 10V | 4.5V, 10V | +20V, -25V | |||
|
|
RFQ |
3,375
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 34A 8SOP-ADV | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | P-Channel | 30V | 34A (Ta) | 4.8 mOhm @ 17A, 10V | 2V @ 500µA | 115nC @ 10V | 4800pF @ 10V | 4.5V, 10V | +20V, -25V | |||
|
|
RFQ |
2,608
In-stock
|
Microchip Technology | MOSFET N-CH 60V 350MA TO92-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 60V | 350mA (Tj) | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,624
In-stock
|
Microchip Technology | MOSFET N-CH 60V 350MA TO92-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 60V | 350mA (Tj) | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
734
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 9A 8SOP | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Ta) | P-Channel | 40V | 9A (Ta) | 15 mOhm @ 4.5A, 10V | 2V @ 500µA | 64nC @ 10V | 2900pF @ 10V | 4.5V, 10V | +20V, -25V | |||
|
|
RFQ |
2,277
In-stock
|
Microchip Technology | MOSFET N-CH 100V 350MA TO92-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 100V | 350mA (Tj) | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,789
In-stock
|
Microchip Technology | MOSFET N-CH 100V 350MA TO92-3 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 100V | 350mA (Tj) | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,807
In-stock
|
Microchip Technology | MOSFET N-CH 60V 350MA TO92-3 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 60V | 350mA (Tj) | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | 60pF @ 25V | 4.5V, 10V | ±20V | |||
