- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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36 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFQ |
2,757
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
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RFQ |
2,746
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
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RFQ |
2,325
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
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RFQ |
1,196
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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RFQ |
3,167
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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RFQ |
681
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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RFQ |
713
In-stock
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Infineon Technologies | MOSFET N-CH 25V 22A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.5W (Ta), 27W (Tc) | N-Channel | - | 25V | 22A (Ta) | 4.6 mOhm @ 30A | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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RFQ |
902
In-stock
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Infineon Technologies | MOSFET N-CH 25V 22A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.5W (Ta), 27W (Tc) | N-Channel | - | 25V | 22A (Ta) | 4.6 mOhm @ 30A | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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RFQ |
3,401
In-stock
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Infineon Technologies | MOSFET N-CH 25V 22A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.5W (Ta), 27W (Tc) | N-Channel | - | 25V | 22A (Ta) | 4.6 mOhm @ 30A | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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RFQ |
2,757
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
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RFQ |
2,746
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
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RFQ |
2,325
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
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RFQ |
717
In-stock
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Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
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RFQ |
3,178
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
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RFQ |
1,688
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
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RFQ |
1,196
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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RFQ |
3,167
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
681
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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|
RFQ |
713
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 22A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.5W (Ta), 27W (Tc) | N-Channel | - | 25V | 22A (Ta) | 4.6 mOhm @ 30A | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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|
RFQ |
902
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 22A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.5W (Ta), 27W (Tc) | N-Channel | - | 25V | 22A (Ta) | 4.6 mOhm @ 30A | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,401
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 22A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.5W (Ta), 27W (Tc) | N-Channel | - | 25V | 22A (Ta) | 4.6 mOhm @ 30A | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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|
RFQ |
717
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
3,178
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
1,688
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,757
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,746
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
2,325
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
RFQ |
1,196
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,167
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
681
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
