- Manufacture :
- Series :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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14 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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RFQ |
745
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 60V 1.5A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 349W (Tc) | N-Channel | 60V | 150A (Tc) | 2.6 mOhm @ 25A, 10V | 2.1V @ 1mA | 223nC @ 10V | - | 4.5V, 10V | ±20V | |||
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RFQ |
1,467
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 60V 130A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 263W (Tc) | N-Channel | 60V | 130A (Tc) | 3.9 mOhm @ 25A, 10V | 2.1V @ 1mA | 151nC @ 10V | 8533pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,003
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 150A 8SOP | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | 30V | 150A (Tc) | 0.65 mOhm @ 50A, 10V | 2.1V @ 1mA | 110nC @ 10V | 10000pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,015
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 150A 8SOP | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | 30V | 150A (Tc) | 0.65 mOhm @ 50A, 10V | 2.1V @ 1mA | 110nC @ 10V | 10000pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
787
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 150A 8SOP | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | 30V | 150A (Tc) | 0.65 mOhm @ 50A, 10V | 2.1V @ 1mA | 110nC @ 10V | 10000pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,484
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 40V 150A SOT78 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 349W (Tc) | N-Channel | 40V | 150A (Tc) | 1.7 mOhm @ 25A, 10V | 2.1V @ 1mA | 120nC @ 5V | 13200pF @ 25V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
1,078
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 60V 130A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 293W (Tc) | N-Channel | 60V | 130A (Tc) | 3.4 mOhm @ 25A, 10V | 2.1V @ 1mA | 95nC @ 5V | 10115pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
745
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 60V 1.5A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 349W (Tc) | N-Channel | 60V | 150A (Tc) | 2.6 mOhm @ 25A, 10V | 2.1V @ 1mA | 223nC @ 10V | - | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,467
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 60V 130A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 263W (Tc) | N-Channel | 60V | 130A (Tc) | 3.9 mOhm @ 25A, 10V | 2.1V @ 1mA | 151nC @ 10V | 8533pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,003
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 150A 8SOP | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | 30V | 150A (Tc) | 0.65 mOhm @ 50A, 10V | 2.1V @ 1mA | 110nC @ 10V | 10000pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,015
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 150A 8SOP | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | 30V | 150A (Tc) | 0.65 mOhm @ 50A, 10V | 2.1V @ 1mA | 110nC @ 10V | 10000pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
787
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 150A 8SOP | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | 30V | 150A (Tc) | 0.65 mOhm @ 50A, 10V | 2.1V @ 1mA | 110nC @ 10V | 10000pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,484
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 40V 150A SOT78 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 349W (Tc) | N-Channel | 40V | 150A (Tc) | 1.7 mOhm @ 25A, 10V | 2.1V @ 1mA | 120nC @ 5V | 13200pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,078
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 60V 130A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 293W (Tc) | N-Channel | 60V | 130A (Tc) | 3.4 mOhm @ 25A, 10V | 2.1V @ 1mA | 95nC @ 5V | 10115pF @ 25V | 4.5V, 10V | ±20V | |||
