Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIR808DP-T1-GE3
RFQ
RFQ
1,078
In-stock
Vishay Siliconix MOSFET N-CH 25V 20A POWERPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 29.8W (Tc) N-Channel - 25V 20A (Tc) 8.9 mOhm @ 17A, 10V 2.5V @ 250µA 22.8nC @ 10V 815pF @ 12.5V 4.5V, 10V ±20V
SIR808DP-T1-GE3
RFQ
RFQ
1,078
In-stock
Vishay Siliconix MOSFET N-CH 25V 20A POWERPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 29.8W (Tc) N-Channel - 25V 20A (Tc) 8.9 mOhm @ 17A, 10V 2.5V @ 250µA 22.8nC @ 10V 815pF @ 12.5V 4.5V, 10V ±20V
SIR808DP-T1-GE3
RFQ
RFQ
1,078
In-stock
Vishay Siliconix MOSFET N-CH 25V 20A POWERPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 29.8W (Tc) N-Channel - 25V 20A (Tc) 8.9 mOhm @ 17A, 10V 2.5V @ 250µA 22.8nC @ 10V 815pF @ 12.5V 4.5V, 10V ±20V