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| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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RFQ |
1,619
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 35A PPAK 1212-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 3.7W (Ta), 39W (Tc) | N-Channel | - | 20V | 35A (Tc) | 6.4 mOhm @ 19.6A, 10V | 2.5V @ 250µA | 30nC @ 10V | 1200pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,619
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 35A PPAK 1212-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 3.7W (Ta), 39W (Tc) | N-Channel | - | 20V | 35A (Tc) | 6.4 mOhm @ 19.6A, 10V | 2.5V @ 250µA | 30nC @ 10V | 1200pF @ 10V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,619
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 35A PPAK 1212-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 3.7W (Ta), 39W (Tc) | N-Channel | - | 20V | 35A (Tc) | 6.4 mOhm @ 19.6A, 10V | 2.5V @ 250µA | 30nC @ 10V | 1200pF @ 10V | 4.5V, 10V | ±20V | |||
