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24 results
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SIR814DP-T1-GE3
SIR814DP-T1-GE3
RFQ
RFQ
1,331
In-stock
 Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 2.1 mOhm @ 20A, 10V 2.3V @ 250µA 86nC @ 10V 3800pF @ 20V 4.5V, 10V ±20V
Default Photo
SI7792DP-T1-GE3
RFQ
RFQ
3,789
In-stock
 Vishay Siliconix MOSFET N-CH 30V P-PACK SO-8 SkyFET®, TrenchFET® Gen III Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel Schottky Diode (Body) 30V 40.6A (Ta), 60A (Tc) 2.1 mOhm @ 20A, 10V 2.5V @ 250µA 135nC @ 10V 4.735nF @ 15V 4.5V, 10V ±20V
SIR814DP-T1-GE3
SIR814DP-T1-GE3
RFQ
RFQ
1,331
In-stock
 Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 2.1 mOhm @ 20A, 10V 2.3V @ 250µA 86nC @ 10V 3800pF @ 20V 4.5V, 10V ±20V
Default Photo
SI7792DP-T1-GE3
RFQ
RFQ
3,789
In-stock
 Vishay Siliconix MOSFET N-CH 30V P-PACK SO-8 SkyFET®, TrenchFET® Gen III Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel Schottky Diode (Body) 30V 40.6A (Ta), 60A (Tc) 2.1 mOhm @ 20A, 10V 2.5V @ 250µA 135nC @ 10V 4.735nF @ 15V 4.5V, 10V ±20V
BSZ0901NSIATMA1
BSZ0901NSIATMA1
RFQ
RFQ
1,005
In-stock
 Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V
BSZ0901NSIATMA1
BSZ0901NSIATMA1
Per Unit
$1.50
 RFQ
RFQ
2,039
In-stock
 Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V
BSZ0901NSIATMA1
BSZ0901NSIATMA1
Per Unit
$0.55
 RFQ
RFQ
3,750
In-stock
 Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V
IRFH8311TRPBF
IRFH8311TRPBF
RFQ
RFQ
2,002
In-stock
 Infineon Technologies MOSFET N CH 30V 32A PQFN5X6 HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 96W (Tc) N-Channel - 30V 32A (Ta), 169A (Tc) 2.1 mOhm @ 20A, 10V 2.35V @ 100µA 66nC @ 10V 4960pF @ 10V 4.5V, 10V ±20V
IRFH8311TRPBF
IRFH8311TRPBF
Per Unit
$1.26
 RFQ
RFQ
3,341
In-stock
 Infineon Technologies MOSFET N CH 30V 32A PQFN5X6 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 96W (Tc) N-Channel - 30V 32A (Ta), 169A (Tc) 2.1 mOhm @ 20A, 10V 2.35V @ 100µA 66nC @ 10V 4960pF @ 10V 4.5V, 10V ±20V
IRFH8311TRPBF
IRFH8311TRPBF
Per Unit
$0.49
 RFQ
RFQ
1,745
In-stock
 Infineon Technologies MOSFET N CH 30V 32A PQFN5X6 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 96W (Tc) N-Channel - 30V 32A (Ta), 169A (Tc) 2.1 mOhm @ 20A, 10V 2.35V @ 100µA 66nC @ 10V 4960pF @ 10V 4.5V, 10V ±20V
BSZ0901NSIATMA1
BSZ0901NSIATMA1
RFQ
RFQ
1,005
In-stock
 Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V
BSZ0901NSIATMA1
BSZ0901NSIATMA1
Per Unit
$1.50
 RFQ
RFQ
2,039
In-stock
 Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V
BSZ0901NSIATMA1
BSZ0901NSIATMA1
Per Unit
$0.55
 RFQ
RFQ
3,750
In-stock
 Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V
IRFH8311TRPBF
IRFH8311TRPBF
RFQ
RFQ
2,002
In-stock
 Infineon Technologies MOSFET N CH 30V 32A PQFN5X6 HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 96W (Tc) N-Channel - 30V 32A (Ta), 169A (Tc) 2.1 mOhm @ 20A, 10V 2.35V @ 100µA 66nC @ 10V 4960pF @ 10V 4.5V, 10V ±20V
IRFH8311TRPBF
IRFH8311TRPBF
Per Unit
$1.26
 RFQ
RFQ
3,341
In-stock
 Infineon Technologies MOSFET N CH 30V 32A PQFN5X6 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 96W (Tc) N-Channel - 30V 32A (Ta), 169A (Tc) 2.1 mOhm @ 20A, 10V 2.35V @ 100µA 66nC @ 10V 4960pF @ 10V 4.5V, 10V ±20V
IRFH8311TRPBF
IRFH8311TRPBF
Per Unit
$0.49
 RFQ
RFQ
1,745
In-stock
 Infineon Technologies MOSFET N CH 30V 32A PQFN5X6 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 96W (Tc) N-Channel - 30V 32A (Ta), 169A (Tc) 2.1 mOhm @ 20A, 10V 2.35V @ 100µA 66nC @ 10V 4960pF @ 10V 4.5V, 10V ±20V
SIR814DP-T1-GE3
SIR814DP-T1-GE3
RFQ
RFQ
1,331
In-stock
 Vishay Siliconix MOSFET N-CH 40V 60A PPAK SO-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 40V 60A (Tc) 2.1 mOhm @ 20A, 10V 2.3V @ 250µA 86nC @ 10V 3800pF @ 20V 4.5V, 10V ±20V
Default Photo
SI7792DP-T1-GE3
RFQ
RFQ
3,789
In-stock
 Vishay Siliconix MOSFET N-CH 30V P-PACK SO-8 SkyFET®, TrenchFET® Gen III Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel Schottky Diode (Body) 30V 40.6A (Ta), 60A (Tc) 2.1 mOhm @ 20A, 10V 2.5V @ 250µA 135nC @ 10V 4.735nF @ 15V 4.5V, 10V ±20V
BSZ0901NSIATMA1
BSZ0901NSIATMA1
RFQ
RFQ
1,005
In-stock
 Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V
BSZ0901NSIATMA1
BSZ0901NSIATMA1
Per Unit
$1.50
 RFQ
RFQ
2,039
In-stock
 Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V
BSZ0901NSIATMA1
BSZ0901NSIATMA1
Per Unit
$0.55
 RFQ
RFQ
3,750
In-stock
 Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V
IRFH8311TRPBF
IRFH8311TRPBF
RFQ
RFQ
2,002
In-stock
 Infineon Technologies MOSFET N CH 30V 32A PQFN5X6 HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 96W (Tc) N-Channel - 30V 32A (Ta), 169A (Tc) 2.1 mOhm @ 20A, 10V 2.35V @ 100µA 66nC @ 10V 4960pF @ 10V 4.5V, 10V ±20V
IRFH8311TRPBF
IRFH8311TRPBF
Per Unit
$1.26
 RFQ
RFQ
3,341
In-stock
 Infineon Technologies MOSFET N CH 30V 32A PQFN5X6 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 96W (Tc) N-Channel - 30V 32A (Ta), 169A (Tc) 2.1 mOhm @ 20A, 10V 2.35V @ 100µA 66nC @ 10V 4960pF @ 10V 4.5V, 10V ±20V
IRFH8311TRPBF
IRFH8311TRPBF
Per Unit
$0.49
 RFQ
RFQ
1,745
In-stock
 Infineon Technologies MOSFET N CH 30V 32A PQFN5X6 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad PQFN (5x6) 3.6W (Ta), 96W (Tc) N-Channel - 30V 32A (Ta), 169A (Tc) 2.1 mOhm @ 20A, 10V 2.35V @ 100µA 66nC @ 10V 4960pF @ 10V 4.5V, 10V ±20V
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