- Manufacture :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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8 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
3,468
In-stock
|
Vishay Siliconix | MOSFET N-CHANNEL 100V 86A DPAK | Automotive, AEC-Q101, TrenchFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4, DPak (3 Leads + Tab) | D-PAK (TO-252) | 136W (Tc) | N-Channel | - | 100V | 86A (Tc) | 8.7 mOhm @ 25A, 10V | 2.5V @ 250µA | 65nC @ 10V | 3500pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,942
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
770
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
|
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RFQ |
2,854
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,468
In-stock
|
Vishay Siliconix | MOSFET N-CHANNEL 100V 86A DPAK | Automotive, AEC-Q101, TrenchFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4, DPak (3 Leads + Tab) | D-PAK (TO-252) | 136W (Tc) | N-Channel | - | 100V | 86A (Tc) | 8.7 mOhm @ 25A, 10V | 2.5V @ 250µA | 65nC @ 10V | 3500pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,942
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
770
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,854
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
