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- Package / Case :
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9 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
1,159
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 40A SOP-8 ADV | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | - | N-Channel | - | 30V | 40A (Ta) | 4.9 mOhm @ 20A, 10V | 2.5V @ 1mA | 42nC @ 10V | 3713pF @ 10V | 4.5V, 10V | ±20V | |||
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|
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RFQ |
1,159
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 40A SOP-8 ADV | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | - | N-Channel | - | 30V | 40A (Ta) | 4.9 mOhm @ 20A, 10V | 2.5V @ 1mA | 42nC @ 10V | 3713pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,573
In-stock
|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,524
In-stock
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Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,154
In-stock
|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
1,159
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 40A SOP-8 ADV | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | - | N-Channel | - | 30V | 40A (Ta) | 4.9 mOhm @ 20A, 10V | 2.5V @ 1mA | 42nC @ 10V | 3713pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,573
In-stock
|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,524
In-stock
|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,154
In-stock
|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
