- Packaging :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
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15 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
3,616
In-stock
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Renesas Electronics America | MOSFET N-CH 30V 45A LFPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 30V | 45A (Ta) | 2.7 mOhm @ 22.5A, 10V | - | 27nC @ 4.5V | 4300pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,538
In-stock
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Renesas Electronics America | MOSFET N-CH 30V 45A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 30V | 45A (Ta) | 2.7 mOhm @ 22.5A, 10V | - | 27nC @ 4.5V | 4300pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,061
In-stock
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Renesas Electronics America | MOSFET N-CH 30V 45A LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 30V | 45A (Ta) | 2.7 mOhm @ 22.5A, 10V | - | 27nC @ 4.5V | 4300pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,616
In-stock
|
Renesas Electronics America | MOSFET N-CH 30V 45A LFPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 30V | 45A (Ta) | 2.7 mOhm @ 22.5A, 10V | - | 27nC @ 4.5V | 4300pF @ 10V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,538
In-stock
|
Renesas Electronics America | MOSFET N-CH 30V 45A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 30V | 45A (Ta) | 2.7 mOhm @ 22.5A, 10V | - | 27nC @ 4.5V | 4300pF @ 10V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,061
In-stock
|
Renesas Electronics America | MOSFET N-CH 30V 45A LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 30V | 45A (Ta) | 2.7 mOhm @ 22.5A, 10V | - | 27nC @ 4.5V | 4300pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,940
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,799
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,085
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,616
In-stock
|
Renesas Electronics America | MOSFET N-CH 30V 45A LFPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 30V | 45A (Ta) | 2.7 mOhm @ 22.5A, 10V | - | 27nC @ 4.5V | 4300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,538
In-stock
|
Renesas Electronics America | MOSFET N-CH 30V 45A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 30V | 45A (Ta) | 2.7 mOhm @ 22.5A, 10V | - | 27nC @ 4.5V | 4300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,061
In-stock
|
Renesas Electronics America | MOSFET N-CH 30V 45A LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 30V | 45A (Ta) | 2.7 mOhm @ 22.5A, 10V | - | 27nC @ 4.5V | 4300pF @ 10V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,940
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,799
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,085
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
