- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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62 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFQ |
677
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 60A PPAK 8SO | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 54W (Tc) | N-Channel | - | 40V | 60A (Tc) | 3.8 mOhm @ 20A, 10V | 2.2V @ 250µA | 51nC @ 10V | 2230pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
2,104
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 60A PPAK 8SO | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 54W (Tc) | N-Channel | - | 40V | 60A (Tc) | 3.8 mOhm @ 20A, 10V | 2.2V @ 250µA | 51nC @ 10V | 2230pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
815
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 60A PPAK 8SO | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 54W (Tc) | N-Channel | - | 40V | 60A (Tc) | 3.8 mOhm @ 20A, 10V | 2.2V @ 250µA | 51nC @ 10V | 2230pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
3,131
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 21A (Ta) | 3.8 mOhm @ 20A, 10V | 2.35V @ 250µA | 45nC @ 4.5V | 3860pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,186
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,583
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
677
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 60A PPAK 8SO | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 54W (Tc) | N-Channel | - | 40V | 60A (Tc) | 3.8 mOhm @ 20A, 10V | 2.2V @ 250µA | 51nC @ 10V | 2230pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
2,104
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 60A PPAK 8SO | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 54W (Tc) | N-Channel | - | 40V | 60A (Tc) | 3.8 mOhm @ 20A, 10V | 2.2V @ 250µA | 51nC @ 10V | 2230pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
815
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 60A PPAK 8SO | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 54W (Tc) | N-Channel | - | 40V | 60A (Tc) | 3.8 mOhm @ 20A, 10V | 2.2V @ 250µA | 51nC @ 10V | 2230pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
1,108
In-stock
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ON Semiconductor | MOSFET N-CH 40V 20A 8WDFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 3.2W (Ta), 55W (Tc) | N-Channel | - | 40V | 20A (Ta), 85A (Tc) | 3.8 mOhm @ 20A, 10V | 2V @ 250µA | 18nC @ 10V | 1600pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,510
In-stock
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ON Semiconductor | MOSFET N-CH 40V 20A 8WDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 3.2W (Ta), 55W (Tc) | N-Channel | - | 40V | 20A (Ta), 85A (Tc) | 3.8 mOhm @ 20A, 10V | 2V @ 250µA | 18nC @ 10V | 1600pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,297
In-stock
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ON Semiconductor | MOSFET N-CH 40V 20A 8WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 3.2W (Ta), 55W (Tc) | N-Channel | - | 40V | 20A (Ta), 85A (Tc) | 3.8 mOhm @ 20A, 10V | 2V @ 250µA | 18nC @ 10V | 1600pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,493
In-stock
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Diodes Incorporated | MOSFET NCH 30V 22A POWERDI | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 136W (Tc) | N-Channel | - | 30V | 22A (Ta), 145A (Tc) | 3.8 mOhm @ 20A, 10V | 3V @ 250µA | 43.7nC @ 15V | 2370pF @ 15V | 4.5V, 10V | +20V, -16V | |||
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RFQ |
2,673
In-stock
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Diodes Incorporated | MOSFET NCH 30V 22A POWERDI | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 3.2W (Ta), 136W (Tc) | N-Channel | - | 30V | 22A (Ta), 145A (Tc) | 3.8 mOhm @ 20A, 10V | 3V @ 250µA | 43.7nC @ 10V | 2370pF @ 15V | 4.5V, 10V | +20V, -16V | |||
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RFQ |
3,291
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 21A (Ta) | 3.8 mOhm @ 20A, 10V | 2.35V @ 250µA | 45nC @ 4.5V | 3860pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,131
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 21A (Ta) | 3.8 mOhm @ 20A, 10V | 2.35V @ 250µA | 45nC @ 4.5V | 3860pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,186
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,583
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,108
In-stock
|
ON Semiconductor | MOSFET N-CH 40V 20A 8WDFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 3.2W (Ta), 55W (Tc) | N-Channel | - | 40V | 20A (Ta), 85A (Tc) | 3.8 mOhm @ 20A, 10V | 2V @ 250µA | 18nC @ 10V | 1600pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,510
In-stock
|
ON Semiconductor | MOSFET N-CH 40V 20A 8WDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 3.2W (Ta), 55W (Tc) | N-Channel | - | 40V | 20A (Ta), 85A (Tc) | 3.8 mOhm @ 20A, 10V | 2V @ 250µA | 18nC @ 10V | 1600pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,297
In-stock
|
ON Semiconductor | MOSFET N-CH 40V 20A 8WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 3.2W (Ta), 55W (Tc) | N-Channel | - | 40V | 20A (Ta), 85A (Tc) | 3.8 mOhm @ 20A, 10V | 2V @ 250µA | 18nC @ 10V | 1600pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,493
In-stock
|
Diodes Incorporated | MOSFET NCH 30V 22A POWERDI | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 136W (Tc) | N-Channel | - | 30V | 22A (Ta), 145A (Tc) | 3.8 mOhm @ 20A, 10V | 3V @ 250µA | 43.7nC @ 15V | 2370pF @ 15V | 4.5V, 10V | +20V, -16V | |||
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RFQ |
2,673
In-stock
|
Diodes Incorporated | MOSFET NCH 30V 22A POWERDI | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 3.2W (Ta), 136W (Tc) | N-Channel | - | 30V | 22A (Ta), 145A (Tc) | 3.8 mOhm @ 20A, 10V | 3V @ 250µA | 43.7nC @ 10V | 2370pF @ 15V | 4.5V, 10V | +20V, -16V | |||
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|
|
RFQ |
3,291
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 21A (Ta) | 3.8 mOhm @ 20A, 10V | 2.35V @ 250µA | 45nC @ 4.5V | 3860pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
637
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 33A 8-SOIC | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.5W (Ta), 7.8W (Tc) | N-Channel | - | 40V | 33A (Tc) | 3.8 mOhm @ 20A, 10V | 2.8V @ 250µA | 122nC @ 10V | 5670pF @ 20V | 4.5V, 10V | ±20V | |||
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|
RFQ |
931
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,774
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,727
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
997
In-stock
|
Diodes Incorporated | MOSFET BVDSS: 31V 40V POWERDI506 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.7W (Ta), 113W (Tc) | N-Channel | - | 30V | 21A (Ta), 140A (Tc) | 3.8 mOhm @ 20A, 10V | 3V @ 250µA | 43.7nC @ 10V | 2370pF @ 15V | 4.5V, 10V | +20V, -16V | |||
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|
RFQ |
3,214
In-stock
|
Diodes Incorporated | MOSFET BVDSS: 31V 40V POWERDI506 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.7W (Ta), 113W (Tc) | N-Channel | - | 30V | 21A (Ta), 140A (Tc) | 3.8 mOhm @ 20A, 10V | 3V @ 250µA | 43.7nC @ 10V | 2370pF @ 15V | 4.5V, 10V | +20V, -16V | |||
