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| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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RFQ |
2,157
In-stock
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Vishay Siliconix | MOSFET N-CH 30V P-PACK SO-8 | SkyFET®, TrenchFET® Gen III | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 5W (Ta), 48W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 28.6A (Ta), 60A (Tc) | 3.4 mOhm @ 20A, 10V | 2.5V @ 250µA | 72nC @ 10V | 2.52nF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,157
In-stock
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Vishay Siliconix | MOSFET N-CH 30V P-PACK SO-8 | SkyFET®, TrenchFET® Gen III | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 5W (Ta), 48W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 28.6A (Ta), 60A (Tc) | 3.4 mOhm @ 20A, 10V | 2.5V @ 250µA | 72nC @ 10V | 2.52nF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,157
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V P-PACK SO-8 | SkyFET®, TrenchFET® Gen III | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 5W (Ta), 48W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 28.6A (Ta), 60A (Tc) | 3.4 mOhm @ 20A, 10V | 2.5V @ 250µA | 72nC @ 10V | 2.52nF @ 15V | 4.5V, 10V | ±20V | |||
