- Manufacture :
- Series :
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- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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8 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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RFQ |
3,381
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10.3A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 50W (Tc) | N-Channel | 100V | 10.3A (Tc) | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,238
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 10.3A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 50W (Tc) | N-Channel | 100V | 10.3A (Tc) | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
3,381
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 10.3A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 50W (Tc) | N-Channel | 100V | 10.3A (Tc) | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,238
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 10.3A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 50W (Tc) | N-Channel | 100V | 10.3A (Tc) | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
3,015
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 10.3A 8SOIC | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 5.6W (Tc) | N-Channel | 100V | 10.3A (Tc) | 26 mOhm @ 10A, 10V | 2.8V @ 250µA | 18nC @ 10V | 690pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,381
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 10.3A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 50W (Tc) | N-Channel | 100V | 10.3A (Tc) | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,238
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 10.3A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 50W (Tc) | N-Channel | 100V | 10.3A (Tc) | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
3,015
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 10.3A 8SOIC | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 5.6W (Tc) | N-Channel | 100V | 10.3A (Tc) | 26 mOhm @ 10A, 10V | 2.8V @ 250µA | 18nC @ 10V | 690pF @ 50V | 4.5V, 10V | ±20V | |||
