- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
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24 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFQ |
869
In-stock
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ON Semiconductor | MOSFET N-CH 24V 32A DPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 110W (Tc) | N-Channel | - | 24V | 32A (Ta) | 4.6 mOhm @ 20A, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
2,657
In-stock
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ON Semiconductor | MOSFET N-CH 24V 32A DPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 110W (Tc) | N-Channel | - | 24V | 32A (Ta) | 4.6 mOhm @ 20A, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
2,657
In-stock
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ON Semiconductor | MOSFET N-CH 24V 32A DPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 110W (Tc) | N-Channel | - | 24V | 32A (Ta) | 4.6 mOhm @ 20A, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
855
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 32A 8-HSOP | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 34.6W (Tc) | N-Channel | - | 30V | 32A (Ta) | 1.9 mOhm @ 32A, 10V | 2.5V @ 1mA | 42.8nC @ 10V | 2850pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,869
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 32A 8-HSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 34.6W (Tc) | N-Channel | - | 30V | 32A (Ta) | 1.9 mOhm @ 32A, 10V | 2.5V @ 1mA | 42.8nC @ 10V | 2850pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,787
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 32A 8-HSOP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 34.6W (Tc) | N-Channel | - | 30V | 32A (Ta) | 1.9 mOhm @ 32A, 10V | 2.5V @ 1mA | 42.8nC @ 10V | 2850pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
869
In-stock
|
ON Semiconductor | MOSFET N-CH 24V 32A DPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 110W (Tc) | N-Channel | - | 24V | 32A (Ta) | 4.6 mOhm @ 20A, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
2,657
In-stock
|
ON Semiconductor | MOSFET N-CH 24V 32A DPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 110W (Tc) | N-Channel | - | 24V | 32A (Ta) | 4.6 mOhm @ 20A, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,657
In-stock
|
ON Semiconductor | MOSFET N-CH 24V 32A DPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 110W (Tc) | N-Channel | - | 24V | 32A (Ta) | 4.6 mOhm @ 20A, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
855
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 32A 8-HSOP | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 34.6W (Tc) | N-Channel | - | 30V | 32A (Ta) | 1.9 mOhm @ 32A, 10V | 2.5V @ 1mA | 42.8nC @ 10V | 2850pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,869
In-stock
|
Rohm Semiconductor | MOSFET N-CH 30V 32A 8-HSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 34.6W (Tc) | N-Channel | - | 30V | 32A (Ta) | 1.9 mOhm @ 32A, 10V | 2.5V @ 1mA | 42.8nC @ 10V | 2850pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,787
In-stock
|
Rohm Semiconductor | MOSFET N-CH 30V 32A 8-HSOP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 34.6W (Tc) | N-Channel | - | 30V | 32A (Ta) | 1.9 mOhm @ 32A, 10V | 2.5V @ 1mA | 42.8nC @ 10V | 2850pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,193
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,484
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,475
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
869
In-stock
|
ON Semiconductor | MOSFET N-CH 24V 32A DPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 110W (Tc) | N-Channel | - | 24V | 32A (Ta) | 4.6 mOhm @ 20A, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
2,657
In-stock
|
ON Semiconductor | MOSFET N-CH 24V 32A DPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 110W (Tc) | N-Channel | - | 24V | 32A (Ta) | 4.6 mOhm @ 20A, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,657
In-stock
|
ON Semiconductor | MOSFET N-CH 24V 32A DPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.5W (Ta), 110W (Tc) | N-Channel | - | 24V | 32A (Ta) | 4.6 mOhm @ 20A, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | 4.5V, 10V | ±20V | |||
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|
RFQ |
855
In-stock
|
Rohm Semiconductor | MOSFET N-CH 30V 32A 8-HSOP | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 34.6W (Tc) | N-Channel | - | 30V | 32A (Ta) | 1.9 mOhm @ 32A, 10V | 2.5V @ 1mA | 42.8nC @ 10V | 2850pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,869
In-stock
|
Rohm Semiconductor | MOSFET N-CH 30V 32A 8-HSOP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 34.6W (Tc) | N-Channel | - | 30V | 32A (Ta) | 1.9 mOhm @ 32A, 10V | 2.5V @ 1mA | 42.8nC @ 10V | 2850pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,787
In-stock
|
Rohm Semiconductor | MOSFET N-CH 30V 32A 8-HSOP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP | 3W (Ta), 34.6W (Tc) | N-Channel | - | 30V | 32A (Ta) | 1.9 mOhm @ 32A, 10V | 2.5V @ 1mA | 42.8nC @ 10V | 2850pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,193
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,484
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,475
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 32A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 21W (Tc) | N-Channel | - | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
