- Manufacture :
- Series :
- Part Status :
- Packaging :
- Operating Temperature :
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- Package / Case :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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12 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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|
RFQ |
1,601
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 68A LFPAK | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 62.5W (Tc) | N-Channel | - | 30V | 68A (Tc) | 7.9 mOhm @ 10A, 10V | 2V @ 1mA | 12nC @ 5V | 1362pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,763
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 68A LFPAK | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 62.5W (Tc) | N-Channel | - | 30V | 68A (Tc) | 7.9 mOhm @ 10A, 10V | 2V @ 1mA | 12nC @ 5V | 1362pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
929
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 68A LFPAK | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 62.5W (Tc) | N-Channel | - | 30V | 68A (Tc) | 7.9 mOhm @ 10A, 10V | 2V @ 1mA | 12nC @ 5V | 1362pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,116
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 60V | 68A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,601
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 68A LFPAK | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 62.5W (Tc) | N-Channel | - | 30V | 68A (Tc) | 7.9 mOhm @ 10A, 10V | 2V @ 1mA | 12nC @ 5V | 1362pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,763
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 68A LFPAK | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 62.5W (Tc) | N-Channel | - | 30V | 68A (Tc) | 7.9 mOhm @ 10A, 10V | 2V @ 1mA | 12nC @ 5V | 1362pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
929
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 68A LFPAK | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 62.5W (Tc) | N-Channel | - | 30V | 68A (Tc) | 7.9 mOhm @ 10A, 10V | 2V @ 1mA | 12nC @ 5V | 1362pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,116
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 60V | 68A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,601
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 68A LFPAK | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 62.5W (Tc) | N-Channel | - | 30V | 68A (Tc) | 7.9 mOhm @ 10A, 10V | 2V @ 1mA | 12nC @ 5V | 1362pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,763
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 68A LFPAK | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 62.5W (Tc) | N-Channel | - | 30V | 68A (Tc) | 7.9 mOhm @ 10A, 10V | 2V @ 1mA | 12nC @ 5V | 1362pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
929
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 68A LFPAK | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 62.5W (Tc) | N-Channel | - | 30V | 68A (Tc) | 7.9 mOhm @ 10A, 10V | 2V @ 1mA | 12nC @ 5V | 1362pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,116
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 60V | 68A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
