- Manufacture :
- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
15 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
|
RFQ |
1,834
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 8.3A PS-8 | U-MOSIV | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | 30V | 8.3A (Ta) | 8.5 mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,772
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 8.3A PS-8 | U-MOSIV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | 30V | 8.3A (Ta) | 8.5 mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,620
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 8.3A PS-8 | U-MOSIV | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | 30V | 8.3A (Ta) | 8.5 mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,834
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 8.3A PS-8 | U-MOSIV | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | 30V | 8.3A (Ta) | 8.5 mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,772
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 8.3A PS-8 | U-MOSIV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | 30V | 8.3A (Ta) | 8.5 mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,620
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 8.3A PS-8 | U-MOSIV | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | 30V | 8.3A (Ta) | 8.5 mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,858
In-stock
|
Diodes Incorporated | MOSFET N-CH 100V 8.3A | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.2W (Ta) | N-Channel | 100V | 8.3A (Ta) | 16 mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | 1871pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
1,094
In-stock
|
Diodes Incorporated | MOSFET N-CH 100V 8.3A | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.2W (Ta) | N-Channel | 100V | 8.3A (Ta) | 16 mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | 1871pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
|
RFQ |
1,282
In-stock
|
Diodes Incorporated | MOSFET N-CH 100V 8.3A | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.2W (Ta) | N-Channel | 100V | 8.3A (Ta) | 16 mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | 1871pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,834
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 8.3A PS-8 | U-MOSIV | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | 30V | 8.3A (Ta) | 8.5 mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,772
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 8.3A PS-8 | U-MOSIV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | 30V | 8.3A (Ta) | 8.5 mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,620
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 8.3A PS-8 | U-MOSIV | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | 30V | 8.3A (Ta) | 8.5 mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,858
In-stock
|
Diodes Incorporated | MOSFET N-CH 100V 8.3A | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.2W (Ta) | N-Channel | 100V | 8.3A (Ta) | 16 mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | 1871pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,094
In-stock
|
Diodes Incorporated | MOSFET N-CH 100V 8.3A | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.2W (Ta) | N-Channel | 100V | 8.3A (Ta) | 16 mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | 1871pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,282
In-stock
|
Diodes Incorporated | MOSFET N-CH 100V 8.3A | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.2W (Ta) | N-Channel | 100V | 8.3A (Ta) | 16 mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | 1871pF @ 50V | 4.5V, 10V | ±20V | |||
