- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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60 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
1,664
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 400MA SOT-23 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 225mW (Ta) | P-Channel | - | 20V | 400mA (Ta) | 800 mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18nC @ 10V | 70pF @ 5V | 4.5V, 10V | ±20V | |||
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RFQ |
678
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A SOT23 | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 320mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,904
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A SOT23 | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 320mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
1,658
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A SOT23 | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 320mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,842
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 400MA SOT-23 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 225mW (Ta) | P-Channel | - | 20V | 400mA (Ta) | 800 mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18nC @ 10V | 70pF @ 5V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,908
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 0.4A SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 225mW (Ta) | P-Channel | - | 20V | 400mA (Ta) | 800 mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18nC @ 10V | 70pF @ 5V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,293
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 0.4A SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 225mW (Ta) | P-Channel | - | 20V | 400mA (Ta) | 800 mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18nC @ 10V | 70pF @ 5V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,965
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 0.4A SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 225mW (Ta) | P-Channel | - | 20V | 400mA (Ta) | 800 mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18nC @ 10V | 70pF @ 5V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,664
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 400MA SOT-23 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 225mW (Ta) | P-Channel | - | 20V | 400mA (Ta) | 800 mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18nC @ 10V | 70pF @ 5V | 4.5V, 10V | ±20V | |||
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|
RFQ |
678
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A SOT23 | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 320mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,904
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A SOT23 | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 320mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,658
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A SOT23 | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 320mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,842
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 400MA SOT-23 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 225mW (Ta) | P-Channel | - | 20V | 400mA (Ta) | 800 mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18nC @ 10V | 70pF @ 5V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
1,908
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 0.4A SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 225mW (Ta) | P-Channel | - | 20V | 400mA (Ta) | 800 mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18nC @ 10V | 70pF @ 5V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,293
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 0.4A SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 225mW (Ta) | P-Channel | - | 20V | 400mA (Ta) | 800 mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18nC @ 10V | 70pF @ 5V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,965
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 0.4A SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 225mW (Ta) | P-Channel | - | 20V | 400mA (Ta) | 800 mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18nC @ 10V | 70pF @ 5V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,015
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 400MA TO-92 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 625mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 50pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,749
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 400MA TO-92 | - | Active | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 625mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 50pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,436
In-stock
|
Diodes Incorporated | MOSFET P-CH 30V 0.4A | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | X1-DFN1006-3 | 500mW (Ta) | P-Channel | - | 30V | 400mA (Ta) | 2.4 Ohm @ 200mA, 10V | 2.3V @ 250µA | 4nC @ 10V | 100pF @ 15V | 4.5V, 10V | ±25V | |||
|
|
RFQ |
1,063
In-stock
|
Diodes Incorporated | MOSFET P-CH 30V 0.4A | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | X1-DFN1006-3 | 500mW (Ta) | P-Channel | - | 30V | 400mA (Ta) | 2.4 Ohm @ 200mA, 10V | 2.3V @ 250µA | 4nC @ 10V | 100pF @ 15V | 4.5V, 10V | ±25V | |||
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|
RFQ |
2,471
In-stock
|
Diodes Incorporated | MOSFET P-CH 30V 0.4A | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | X1-DFN1006-3 | 500mW (Ta) | P-Channel | - | 30V | 400mA (Ta) | 2.4 Ohm @ 200mA, 10V | 2.3V @ 250µA | 4nC @ 10V | 100pF @ 15V | 4.5V, 10V | ±25V | |||
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|
RFQ |
2,134
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,970
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,544
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,494
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 400MA TO-92 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 625mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 50pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,893
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 270mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,813
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 270mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,529
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 270mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,097
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 400MA SOT-23 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 225mW (Ta) | P-Channel | - | 20V | 400mA (Ta) | 800 mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18nC @ 10V | 70pF @ 5V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,538
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 400MA SOT-23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 225mW (Ta) | P-Channel | - | 20V | 400mA (Ta) | 800 mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18nC @ 10V | 70pF @ 5V | 4.5V, 10V | ±20V | |||
