- Series :
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- Packaging :
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- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
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6 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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|
RFQ |
3,850
In-stock
|
Infineon Technologies | MOSFET P-CH 40V 74A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 143W (Tc) | P-Channel | - | 40V | 56A (Ta) | 16 mOhm @ 37A, 10V | 3V @ 100µA | 224nC @ 10V | 7676pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,860
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 56A 8SOP-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 70W (Tc) | N-Channel | - | 30V | 56A (Ta) | 1.9 mOhm @ 28A, 10V | 2.3V @ 1mA | 91nC @ 10V | 7700pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,850
In-stock
|
Infineon Technologies | MOSFET P-CH 40V 74A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 143W (Tc) | P-Channel | - | 40V | 56A (Ta) | 16 mOhm @ 37A, 10V | 3V @ 100µA | 224nC @ 10V | 7676pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,860
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 56A 8SOP-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 70W (Tc) | N-Channel | - | 30V | 56A (Ta) | 1.9 mOhm @ 28A, 10V | 2.3V @ 1mA | 91nC @ 10V | 7700pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,850
In-stock
|
Infineon Technologies | MOSFET P-CH 40V 74A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 143W (Tc) | P-Channel | - | 40V | 56A (Ta) | 16 mOhm @ 37A, 10V | 3V @ 100µA | 224nC @ 10V | 7676pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,860
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 56A 8SOP-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 70W (Tc) | N-Channel | - | 30V | 56A (Ta) | 1.9 mOhm @ 28A, 10V | 2.3V @ 1mA | 91nC @ 10V | 7700pF @ 10V | 4.5V, 10V | ±20V | |||
