Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
RFQ
3,648
In-stock
Infineon Technologies MOSFET N-CH 100V 98A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 167W (Tc) N-Channel 100V 98A (Tc) 8 mOhm @ 98A, 10V 2.4V @ 130µA 90nC @ 10V 8610pF @ 50V 4.5V, 10V ±20V
Default Photo
RFQ
RFQ
3,648
In-stock
Infineon Technologies MOSFET N-CH 100V 98A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 167W (Tc) N-Channel 100V 98A (Tc) 8 mOhm @ 98A, 10V 2.4V @ 130µA 90nC @ 10V 8610pF @ 50V 4.5V, 10V ±20V
DMT10H010LCT
Per Unit
$1.85
RFQ
RFQ
3,136
In-stock
Diodes Incorporated MOSFET N-CH 100V TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 2W (Ta), 139W (Tc) N-Channel 100V 98A (Tc) 9.5 mOhm @ 13A, 10V 3V @ 250µA 71nC @ 10V 3000pF @ 50V 4.5V, 10V ±20V
IPP08CN10L G
RFQ
RFQ
3,648
In-stock
Infineon Technologies MOSFET N-CH 100V 98A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 167W (Tc) N-Channel 100V 98A (Tc) 8 mOhm @ 98A, 10V 2.4V @ 130µA 90nC @ 10V 8610pF @ 50V 4.5V, 10V ±20V
DMT10H010LCT
Per Unit
$1.85
RFQ
RFQ
3,136
In-stock
Diodes Incorporated MOSFET N-CH 100V TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 2W (Ta), 139W (Tc) N-Channel 100V 98A (Tc) 9.5 mOhm @ 13A, 10V 3V @ 250µA 71nC @ 10V 3000pF @ 50V 4.5V, 10V ±20V