- Series :
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- Packaging :
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- Package / Case :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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34 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
2,192
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,841
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,263
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,512
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,651
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,387
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 260A POWERFLAT | STripFET™ H6 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 166W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.3 mOhm @ 22.5A, 10V | 1V @ 250µA (Min) | 61.5nC @ 4.5V | 6375pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
887
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 260A POWERFLAT | STripFET™ H6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 166W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.3 mOhm @ 22.5A, 10V | 1V @ 250µA (Min) | 61.5nC @ 4.5V | 6375pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,763
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 260A POWERFLAT | STripFET™ H6 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 166W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.3 mOhm @ 22.5A, 10V | 1V @ 250µA (Min) | 61.5nC @ 4.5V | 6375pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,192
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,841
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,263
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,512
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,651
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,387
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 260A POWERFLAT | STripFET™ H6 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 166W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.3 mOhm @ 22.5A, 10V | 1V @ 250µA (Min) | 61.5nC @ 4.5V | 6375pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
887
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 260A POWERFLAT | STripFET™ H6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 166W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.3 mOhm @ 22.5A, 10V | 1V @ 250µA (Min) | 61.5nC @ 4.5V | 6375pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,763
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 260A POWERFLAT | STripFET™ H6 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 166W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.3 mOhm @ 22.5A, 10V | 1V @ 250µA (Min) | 61.5nC @ 4.5V | 6375pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,205
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | - | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 960mW (Ta), 170W (Tc) | N-Channel | - | 60V | 260A (Tc) | - | - | - | - | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,971
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | - | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 960mW (Ta), 170W (Tc) | N-Channel | - | 60V | 260A (Tc) | - | - | - | - | 4.5V, 10V | ±20V | |||
|
|
RFQ |
752
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | - | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 960mW (Ta), 170W (Tc) | N-Channel | - | 60V | 260A (Tc) | - | - | - | - | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,822
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,944
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.95 mOhm @ 60A, 10V | 2.35V @ 150µA | 86nC @ 4.5V | 8420pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,192
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,841
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,263
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,512
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,651
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,387
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 260A POWERFLAT | STripFET™ H6 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 166W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.3 mOhm @ 22.5A, 10V | 1V @ 250µA (Min) | 61.5nC @ 4.5V | 6375pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
887
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 260A POWERFLAT | STripFET™ H6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 166W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.3 mOhm @ 22.5A, 10V | 1V @ 250µA (Min) | 61.5nC @ 4.5V | 6375pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,763
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 260A POWERFLAT | STripFET™ H6 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 166W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.3 mOhm @ 22.5A, 10V | 1V @ 250µA (Min) | 61.5nC @ 4.5V | 6375pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,205
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | - | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 960mW (Ta), 170W (Tc) | N-Channel | - | 60V | 260A (Tc) | - | - | - | - | 4.5V, 10V | ±20V | |||
