- Operating Temperature :
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84 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFQ |
2,997
In-stock
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Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,207
In-stock
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Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,304
In-stock
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Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,077
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 150A POWERDI5060 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 100W (Tc) | N-Channel | - | 30V | 150A (Tc) | 2 mOhm @ 30A, 10V | 3V @ 1mA | 68nC @ 10V | 3944pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,715
In-stock
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Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,019
In-stock
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Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
3,776
In-stock
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Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,023
In-stock
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STMicroelectronics | MOSFET NCH 30V 150A POWERFLAT5X6 | DeepGATE™, STripFET™ VI | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (6x5) | 80W (Tc) | N-Channel | - | 30V | 150A (Tc) | 2.4 mOhm @ 16.5A, 10V | 1V @ 250µA | 40nC @ 4.5V | 4040pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,518
In-stock
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STMicroelectronics | MOSFET NCH 30V 150A POWERFLAT5X6 | DeepGATE™, STripFET™ VI | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (6x5) | 80W (Tc) | N-Channel | - | 30V | 150A (Tc) | 2.4 mOhm @ 16.5A, 10V | 1V @ 250µA | 40nC @ 4.5V | 4040pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,522
In-stock
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STMicroelectronics | MOSFET NCH 30V 150A POWERFLAT5X6 | DeepGATE™, STripFET™ VI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (6x5) | 80W (Tc) | N-Channel | - | 30V | 150A (Tc) | 2.4 mOhm @ 16.5A, 10V | 1V @ 250µA | 40nC @ 4.5V | 4040pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,919
In-stock
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Infineon Technologies | MOSFET N-CH 30V 150A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,997
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
2,207
In-stock
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Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,680
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 132W (Tc) | N-Channel | - | 40V | 150A (Tc) | 1.24 mOhm @ 50A, 10V | 2.4V @ 500µA | 74nC @ 10V | 7200pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
1,540
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 132W (Tc) | N-Channel | - | 40V | 150A (Tc) | 1.24 mOhm @ 50A, 10V | 2.4V @ 500µA | 74nC @ 10V | 7200pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
853
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 132W (Tc) | N-Channel | - | 40V | 150A (Tc) | 1.24 mOhm @ 50A, 10V | 2.4V @ 500µA | 74nC @ 10V | 7200pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
3,304
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,077
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 150A POWERDI5060 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 100W (Tc) | N-Channel | - | 30V | 150A (Tc) | 2 mOhm @ 30A, 10V | 3V @ 1mA | 68nC @ 10V | 3944pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,715
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
|
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RFQ |
3,019
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,776
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 150A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
|
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RFQ |
1,023
In-stock
|
STMicroelectronics | MOSFET NCH 30V 150A POWERFLAT5X6 | DeepGATE™, STripFET™ VI | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (6x5) | 80W (Tc) | N-Channel | - | 30V | 150A (Tc) | 2.4 mOhm @ 16.5A, 10V | 1V @ 250µA | 40nC @ 4.5V | 4040pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,518
In-stock
|
STMicroelectronics | MOSFET NCH 30V 150A POWERFLAT5X6 | DeepGATE™, STripFET™ VI | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (6x5) | 80W (Tc) | N-Channel | - | 30V | 150A (Tc) | 2.4 mOhm @ 16.5A, 10V | 1V @ 250µA | 40nC @ 4.5V | 4040pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,522
In-stock
|
STMicroelectronics | MOSFET NCH 30V 150A POWERFLAT5X6 | DeepGATE™, STripFET™ VI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (6x5) | 80W (Tc) | N-Channel | - | 30V | 150A (Tc) | 2.4 mOhm @ 16.5A, 10V | 1V @ 250µA | 40nC @ 4.5V | 4040pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,919
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 150A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,680
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 132W (Tc) | N-Channel | - | 40V | 150A (Tc) | 1.24 mOhm @ 50A, 10V | 2.4V @ 500µA | 74nC @ 10V | 7200pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,540
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 132W (Tc) | N-Channel | - | 40V | 150A (Tc) | 1.24 mOhm @ 50A, 10V | 2.4V @ 500µA | 74nC @ 10V | 7200pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
853
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 132W (Tc) | N-Channel | - | 40V | 150A (Tc) | 1.24 mOhm @ 50A, 10V | 2.4V @ 500µA | 74nC @ 10V | 7200pF @ 20V | 4.5V, 10V | ±20V | |||
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|
RFQ |
745
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 60V 1.5A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 349W (Tc) | N-Channel | - | 60V | 150A (Tc) | 2.6 mOhm @ 25A, 10V | 2.1V @ 1mA | 223nC @ 10V | - | 4.5V, 10V | ±20V | |||
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|
RFQ |
980
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 150A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 140W (Tc) | N-Channel | - | 30V | 150A (Tc) | 3.8 mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | 4.5V, 10V | ±20V | |||
