- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
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51 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
937
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 58A D-PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55W (Tc) | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | |||
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RFQ |
1,196
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 58A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 55W (Tc) | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
937
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 58A D-PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55W (Tc) | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,511
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 58A D-PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55W (Tc) | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,196
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 58A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 55W (Tc) | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,511
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 58A D-PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55W (Tc) | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,549
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 60V 58A DPAK | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 60V | 58A (Tc) | 4.4 mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
3,326
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 60V 58A DPAK | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 60V | 58A (Tc) | 4.4 mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,936
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 60V 58A DPAK | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 60V | 58A (Tc) | 4.4 mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,527
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 40V 58A DPAK | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 40V | 58A (Tc) | 3.1 mOhm @ 29A, 10V | 2.4V @ 500µA | 60nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
669
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 40V 58A DPAK | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 40V | 58A (Tc) | 3.1 mOhm @ 29A, 10V | 2.4V @ 500µA | 60nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
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|
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RFQ |
3,449
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 40V 58A DPAK | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 40V | 58A (Tc) | 3.1 mOhm @ 29A, 10V | 2.4V @ 500µA | 60nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
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RFQ |
2,230
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 58A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.6W (Ta), 46W (Tc) | N-Channel | - | 40V | 58A (Tc) | 7.5 mOhm @ 16A, 10V | 3V @ 250µA | 77nC @ 10V | 3540pF @ 20V | 4.5V, 10V | ±20V | |||
|
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RFQ |
2,049
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 58A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.6W (Ta), 46W (Tc) | N-Channel | - | 40V | 58A (Tc) | 7.5 mOhm @ 16A, 10V | 3V @ 250µA | 77nC @ 10V | 3540pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,478
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 58A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.6W (Ta), 46W (Tc) | N-Channel | - | 40V | 58A (Tc) | 7.5 mOhm @ 16A, 10V | 3V @ 250µA | 77nC @ 10V | 3540pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,981
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 58A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55W (Tc) | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,820
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 58A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55W (Tc) | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,801
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 58A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55W (Tc) | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,626
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 58A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.6W (Ta), 31.2W (Tc) | N-Channel | - | 30V | 58A (Tc) | 5.1 mOhm @ 10A, 10V | 2.2V @ 250µA | 29nC @ 10V | 1450pF @ 15V | 4.5V, 10V | +20V, -16V | |||
|
|
RFQ |
3,829
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 58A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.6W (Ta), 31.2W (Tc) | N-Channel | - | 30V | 58A (Tc) | 5.1 mOhm @ 10A, 10V | 2.2V @ 250µA | 29nC @ 10V | 1450pF @ 15V | 4.5V, 10V | +20V, -16V | |||
|
|
RFQ |
1,152
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 58A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.6W (Ta), 31.2W (Tc) | N-Channel | - | 30V | 58A (Tc) | 5.1 mOhm @ 10A, 10V | 2.2V @ 250µA | 29nC @ 10V | 1450pF @ 15V | 4.5V, 10V | +20V, -16V | |||
|
|
RFQ |
3,451
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 58A | Automotive, AEC-Q101, TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 48W (Tc) | N-Channel | - | 40V | 58A (Tc) | 6.3 mOhm @ 14A, 10V | 2.5V @ 250µA | 55nC @ 10V | 2450pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,385
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 58A | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 48W (Tc) | N-Channel | - | 40V | 58A (Tc) | 6.3 mOhm @ 14A, 10V | 2.5V @ 250µA | 55nC @ 10V | 2450pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,075
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 58A | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 48W (Tc) | N-Channel | - | 40V | 58A (Tc) | 6.3 mOhm @ 14A, 10V | 2.5V @ 250µA | 55nC @ 10V | 2450pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,787
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 58A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.6W (Ta), 46W (Tc) | N-Channel | - | 40V | 58A (Tc) | 7.5 mOhm @ 16A, 10V | 3V @ 250µA | 77nC @ 10V | 3540pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,507
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 58A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.6W (Ta), 46W (Tc) | N-Channel | - | 40V | 58A (Tc) | 7.5 mOhm @ 16A, 10V | 3V @ 250µA | 77nC @ 10V | 3540pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,738
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V 58A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 4.6W (Ta), 46W (Tc) | N-Channel | - | 40V | 58A (Tc) | 7.5 mOhm @ 16A, 10V | 3V @ 250µA | 77nC @ 10V | 3540pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
937
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 58A D-PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55W (Tc) | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,196
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 58A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 55W (Tc) | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,511
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 58A D-PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55W (Tc) | N-Channel | - | 30V | 58A (Tc) | 8.9 mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | 4.5V, 10V | ±20V | |||
