- Part Status :
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- Supplier Device Package :
- Power Dissipation (Max) :
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86 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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RFQ |
3,878
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET P-CH 60V TO252 | - | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 60W (Tc) | P-Channel | 60V | 26A (Tc) | 40 mOhm @ 20A, 10V | 2.4V @ 250µA | 54nC @ 10V | 3600pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
3,285
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET P-CH 60V TO252 | - | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 60W (Tc) | P-Channel | 60V | 26A (Tc) | 40 mOhm @ 20A, 10V | 2.4V @ 250µA | 54nC @ 10V | 3600pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
2,960
In-stock
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Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
3,649
In-stock
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Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
2,804
In-stock
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Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
3,533
In-stock
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Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
817
In-stock
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Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
3,602
In-stock
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Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
3,202
In-stock
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Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
3,919
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
715
In-stock
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Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
3,495
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
2,172
In-stock
|
Renesas Electronics America | MOSFET N-CH 30V 26A 8HVSON | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-HWSON (3.3x3.3) | 1.5W (Ta) | N-Channel | 30V | 26A (Tc) | 3.8 mOhm @ 26A, 10V | - | 51nC @ 10V | 2490pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,878
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET P-CH 60V TO252 | - | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 60W (Tc) | P-Channel | 60V | 26A (Tc) | 40 mOhm @ 20A, 10V | 2.4V @ 250µA | 54nC @ 10V | 3600pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
3,285
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET P-CH 60V TO252 | - | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 60W (Tc) | P-Channel | 60V | 26A (Tc) | 40 mOhm @ 20A, 10V | 2.4V @ 250µA | 54nC @ 10V | 3600pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
779
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET P-CH 60V 26A TO251A | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TO-251A | 2.5W (Ta), 60W (Tc) | P-Channel | 60V | 26A (Tc) | 40 mOhm @ 20A, 10V | 2.4V @ 250µA | 54nC @ 10V | 3600pF @ 30V | 4.5V, 10V | ±20V | |||
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RFQ |
1,485
In-stock
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Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
2,960
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,649
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,804
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,533
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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|
RFQ |
817
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,602
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,202
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,919
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
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RFQ |
2,167
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 26A 8-SOIC | DeepGATE™, STripFET™ VI | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.7W (Ta) | N-Channel | 30V | 26A (Tc) | 4.4 mOhm @ 13A, 10V | 1V @ 250µA | 40nC @ 4.5V | 4040pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,895
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 26A 8-SOIC | DeepGATE™, STripFET™ VI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.7W (Ta) | N-Channel | 30V | 26A (Tc) | 4.4 mOhm @ 13A, 10V | 1V @ 250µA | 40nC @ 4.5V | 4040pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,316
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 26A 8-SOIC | DeepGATE™, STripFET™ VI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.7W (Ta) | N-Channel | 30V | 26A (Tc) | 4.4 mOhm @ 13A, 10V | 1V @ 250µA | 40nC @ 4.5V | 4040pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
715
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,495
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 26A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V |