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36 results
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BSP297 E6327
BSP297 E6327
RFQ
RFQ
1,805
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297L6327HTSA1
BSP297L6327HTSA1
RFQ
RFQ
3,774
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297L6327HTSA1
BSP297L6327HTSA1
RFQ
RFQ
3,260
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297L6327HTSA1
BSP297L6327HTSA1
RFQ
RFQ
1,329
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297H6327XTSA1
BSP297H6327XTSA1
RFQ
RFQ
3,400
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297H6327XTSA1
BSP297H6327XTSA1
Per Unit
$1.01
 RFQ
RFQ
3,893
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297H6327XTSA1
BSP297H6327XTSA1
Per Unit
$0.39
 RFQ
RFQ
1,188
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
TPC8012-H(TE12L,Q)
TPC8012-H(TE12L,Q)
RFQ
RFQ
3,124
In-stock
 Toshiba Semiconductor and Storage MOSFET N-CH 200V 1.8A 8-SOP π-MOSV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel - 200V 1.8A (Ta) 400 mOhm @ 900mA, 10V 5V @ 1mA 11nC @ 10V 440pF @ 10V 4.5V, 10V ±20V
BSP297 E6327
BSP297 E6327
RFQ
RFQ
1,805
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297L6327HTSA1
BSP297L6327HTSA1
RFQ
RFQ
3,774
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297L6327HTSA1
BSP297L6327HTSA1
RFQ
RFQ
3,260
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297L6327HTSA1
BSP297L6327HTSA1
RFQ
RFQ
1,329
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297H6327XTSA1
BSP297H6327XTSA1
RFQ
RFQ
3,400
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297H6327XTSA1
BSP297H6327XTSA1
Per Unit
$1.01
 RFQ
RFQ
3,893
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297H6327XTSA1
BSP297H6327XTSA1
Per Unit
$0.39
 RFQ
RFQ
1,188
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
TPC8012-H(TE12L,Q)
TPC8012-H(TE12L,Q)
RFQ
RFQ
3,124
In-stock
 Toshiba Semiconductor and Storage MOSFET N-CH 200V 1.8A 8-SOP π-MOSV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel - 200V 1.8A (Ta) 400 mOhm @ 900mA, 10V 5V @ 1mA 11nC @ 10V 440pF @ 10V 4.5V, 10V ±20V
TP2520N8-G
TP2520N8-G
RFQ
RFQ
1,810
In-stock
 Microchip Technology MOSFET P-CH 200V 0.26A SOT89-3 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-243AA TO-243AA (SOT-89) 1.6W (Ta) P-Channel - 200V 260mA (Tj) 12 Ohm @ 200mA, 10V 2.4V @ 1mA - 125pF @ 25V 4.5V, 10V ±20V
TP2520N8-G
TP2520N8-G
Per Unit
$1.31
 RFQ
RFQ
1,191
In-stock
 Microchip Technology MOSFET P-CH 200V 0.26A SOT89-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-243AA TO-243AA (SOT-89) 1.6W (Ta) P-Channel - 200V 260mA (Tj) 12 Ohm @ 200mA, 10V 2.4V @ 1mA - 125pF @ 25V 4.5V, 10V ±20V
TP2520N8-G
TP2520N8-G
Per Unit
$0.98
 RFQ
RFQ
2,516
In-stock
 Microchip Technology MOSFET P-CH 200V 0.26A SOT89-3 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-243AA TO-243AA (SOT-89) 1.6W (Ta) P-Channel - 200V 260mA (Tj) 12 Ohm @ 200mA, 10V 2.4V @ 1mA - 125pF @ 25V 4.5V, 10V ±20V
SQJ454EP-T1_GE3
SQJ454EP-T1_GE3
RFQ
RFQ
3,019
In-stock
 Vishay Siliconix MOSFET N-CH 200V 13A POWERPAKSO Automotive, AEC-Q101, TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 68W (Tc) N-Channel - 200V 13A (Tc) 145 mOhm @ 7.5A, 10V 2.5V @ 250µA 85nC @ 10V 2600pF @ 25V 4.5V, 10V ±20V
SQJ454EP-T1_GE3
SQJ454EP-T1_GE3
Per Unit
$1.29
 RFQ
RFQ
3,212
In-stock
 Vishay Siliconix MOSFET N-CH 200V 13A POWERPAKSO Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 68W (Tc) N-Channel - 200V 13A (Tc) 145 mOhm @ 7.5A, 10V 2.5V @ 250µA 85nC @ 10V 2600pF @ 25V 4.5V, 10V ±20V
SQJ454EP-T1_GE3
SQJ454EP-T1_GE3
Per Unit
$0.50
 RFQ
RFQ
1,323
In-stock
 Vishay Siliconix MOSFET N-CH 200V 13A POWERPAKSO Automotive, AEC-Q101, TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 68W (Tc) N-Channel - 200V 13A (Tc) 145 mOhm @ 7.5A, 10V 2.5V @ 250µA 85nC @ 10V 2600pF @ 25V 4.5V, 10V ±20V
BSP297 E6327
BSP297 E6327
RFQ
RFQ
1,805
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297L6327HTSA1
BSP297L6327HTSA1
RFQ
RFQ
3,774
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297L6327HTSA1
BSP297L6327HTSA1
RFQ
RFQ
3,260
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297L6327HTSA1
BSP297L6327HTSA1
RFQ
RFQ
1,329
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297H6327XTSA1
BSP297H6327XTSA1
RFQ
RFQ
3,400
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297H6327XTSA1
BSP297H6327XTSA1
Per Unit
$1.01
 RFQ
RFQ
3,893
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
BSP297H6327XTSA1
BSP297H6327XTSA1
Per Unit
$0.39
 RFQ
RFQ
1,188
In-stock
 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1.8V @ 400µA 16.1nC @ 10V 357pF @ 25V 4.5V, 10V ±20V
TPC8012-H(TE12L,Q)
TPC8012-H(TE12L,Q)
RFQ
RFQ
3,124
In-stock
 Toshiba Semiconductor and Storage MOSFET N-CH 200V 1.8A 8-SOP π-MOSV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel - 200V 1.8A (Ta) 400 mOhm @ 900mA, 10V 5V @ 1mA 11nC @ 10V 440pF @ 10V 4.5V, 10V ±20V
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