Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Default Photo
Per Unit
$3.53
RFQ
RFQ
745
In-stock
Nexperia USA Inc. MOSFET N-CH 60V 1.5A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 349W (Tc) N-Channel 60V 150A (Tc) 2.6 mOhm @ 25A, 10V 2.1V @ 1mA 223nC @ 10V - 4.5V, 10V ±20V
Default Photo
Per Unit
$3.53
RFQ
RFQ
3,484
In-stock
Nexperia USA Inc. MOSFET N-CH 40V 150A SOT78 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 349W (Tc) N-Channel 40V 150A (Tc) 1.7 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 13200pF @ 25V 4.5V, 10V ±20V
PSMN2R5-60PLQ
Per Unit
$3.53
RFQ
RFQ
745
In-stock
Nexperia USA Inc. MOSFET N-CH 60V 1.5A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 349W (Tc) N-Channel 60V 150A (Tc) 2.6 mOhm @ 25A, 10V 2.1V @ 1mA 223nC @ 10V - 4.5V, 10V ±20V
PSMN1R9-40PLQ
Per Unit
$3.53
RFQ
RFQ
3,484
In-stock
Nexperia USA Inc. MOSFET N-CH 40V 150A SOT78 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 349W (Tc) N-Channel 40V 150A (Tc) 1.7 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 13200pF @ 25V 4.5V, 10V ±20V