- Series :
- Part Status :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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45 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFQ |
1,087
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 3160pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,953
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 3160pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,560
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 4210pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
1,221
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A D2PAK | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 4210pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
2,207
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,746
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,470
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
3,175
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 3160pF @ 25V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
1,087
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 3160pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,051
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,953
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 3160pF @ 25V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
2,560
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 4210pF @ 25V | 4.5V, 10V | ±20V | |||
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|
RFQ |
1,221
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A D2PAK | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 4210pF @ 25V | 4.5V, 10V | ±20V | |||
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RFQ |
3,588
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
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RFQ |
2,371
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
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RFQ |
1,396
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,207
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,746
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,023
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 3160pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,886
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 3160pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,870
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 3160pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,470
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
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|
|
RFQ |
3,175
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 3160pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,051
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,588
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,371
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,396
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 180A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 210W (Tc) | N-Channel | - | 20V | 180A (Tc) | 4 mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,023
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 3160pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,886
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 3160pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,870
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 210W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.7 mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | 3160pF @ 25V | 4.5V, 10V | ±20V | |||
