- Series :
- Part Status :
- Packaging :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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33 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
1,196
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,167
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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|
RFQ |
681
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,680
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,850
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,012
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
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|
RFQ |
2,002
In-stock
|
Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 96W (Tc) | N-Channel | - | 30V | 32A (Ta), 169A (Tc) | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | 4960pF @ 10V | 4.5V, 10V | ±20V | |||
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|
RFQ |
3,341
In-stock
|
Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 96W (Tc) | N-Channel | - | 30V | 32A (Ta), 169A (Tc) | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | 4960pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,745
In-stock
|
Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 96W (Tc) | N-Channel | - | 30V | 32A (Ta), 169A (Tc) | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | 4960pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,196
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,167
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
681
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,680
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,850
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,012
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,002
In-stock
|
Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 96W (Tc) | N-Channel | - | 30V | 32A (Ta), 169A (Tc) | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | 4960pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,341
In-stock
|
Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 96W (Tc) | N-Channel | - | 30V | 32A (Ta), 169A (Tc) | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | 4960pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,745
In-stock
|
Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 96W (Tc) | N-Channel | - | 30V | 32A (Ta), 169A (Tc) | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | 4960pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,573
In-stock
|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,524
In-stock
|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,154
In-stock
|
Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,196
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,167
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
681
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 20A PQFN | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.8W (Ta), 28W (Tc) | N-Channel | - | 25V | 20A (Ta) | 4.4 mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,680
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,850
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,012
In-stock
|
Infineon Technologies | MOSFET N CH 25V 28A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | - | 2.7W (Ta), 39W (Tc) | N-Channel | - | 25V | 28A (Ta) | 2.2 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,002
In-stock
|
Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 96W (Tc) | N-Channel | - | 30V | 32A (Ta), 169A (Tc) | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | 4960pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
3,341
In-stock
|
Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 96W (Tc) | N-Channel | - | 30V | 32A (Ta), 169A (Tc) | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | 4960pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
1,745
In-stock
|
Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 96W (Tc) | N-Channel | - | 30V | 32A (Ta), 169A (Tc) | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | 4960pF @ 10V | 4.5V, 10V | ±20V | |||
