- Manufacture :
- Series :
- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
5 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||||
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RFQ |
2,423
In-stock
|
NXP USA Inc. | MOSFET N-CH 55V 100A SOT429 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 4.2 mOhm @ 25A, 10V | 2V @ 1mA | 226nC @ 5V | 13000pF @ 25V | 4.5V, 10V | ±15V | |||
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|
|
RFQ |
2,423
In-stock
|
NXP USA Inc. | MOSFET N-CH 55V 100A SOT429 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 4.2 mOhm @ 25A, 10V | 2V @ 1mA | 226nC @ 5V | 13000pF @ 25V | 4.5V, 10V | ±15V | |||
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|
|
RFQ |
3,271
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 195A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 341W (Tc) | N-Channel | - | 40V | 195A (Tc) | 1.7 mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
RFQ |
2,423
In-stock
|
NXP USA Inc. | MOSFET N-CH 55V 100A SOT429 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 4.2 mOhm @ 25A, 10V | 2V @ 1mA | 226nC @ 5V | 13000pF @ 25V | 4.5V, 10V | ±15V | |||
|
|
RFQ |
3,271
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 195A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 341W (Tc) | N-Channel | - | 40V | 195A (Tc) | 1.7 mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | 4.5V, 10V | ±20V | |||
