Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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R6009KNX
Per Unit
$1.81
RFQ
RFQ
3,028
In-stock
Rohm Semiconductor MOSFET N-CH 600V 9A TO220FM - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 48W (Tc) N-Channel Schottky Diode (Isolated) 600V 9A (Tc) 535 mOhm @ 2.8A, 10V 5V @ 1mA 16.5nC @ 10V 540pF @ 25V 10V ±20V
R6009KNX
Per Unit
$1.81
RFQ
RFQ
3,028
In-stock
Rohm Semiconductor MOSFET N-CH 600V 9A TO220FM - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 48W (Tc) N-Channel Schottky Diode (Isolated) 600V 9A (Tc) 535 mOhm @ 2.8A, 10V 5V @ 1mA 16.5nC @ 10V 540pF @ 25V 10V ±20V
R6009KNX
Per Unit
$1.81
RFQ
RFQ
3,028
In-stock
Rohm Semiconductor MOSFET N-CH 600V 9A TO220FM - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 48W (Tc) N-Channel Schottky Diode (Isolated) 600V 9A (Tc) 535 mOhm @ 2.8A, 10V 5V @ 1mA 16.5nC @ 10V 540pF @ 25V 10V ±20V