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31 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||||
|
RFQ |
2,924
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 3.7A (Ta) | 2 Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
2,875
In-stock
|
ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 2.5W (Ta), 30W (Tc) | P-Channel | - | 200V | 3.1A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
1,032
In-stock
|
ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 2.5W (Ta), 30W (Tc) | P-Channel | - | 200V | 3.1A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
2,662
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 6.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 450V | 6.5A (Ta) | 1.2 Ohm @ 3.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
3,671
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 550V | 5A (Ta) | 1.7 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
816
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 6A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 6A (Ta) | 1.4 Ohm @ 3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
2,952
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 525V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 525V | 5A (Ta) | 1.5 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
2,924
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 3.7A (Ta) | 2 Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
2,875
In-stock
|
ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 2.5W (Ta), 30W (Tc) | P-Channel | - | 200V | 3.1A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
1,032
In-stock
|
ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 2.5W (Ta), 30W (Tc) | P-Channel | - | 200V | 3.1A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
3,028
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 9A TO220FM | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 48W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 9A (Tc) | 535 mOhm @ 2.8A, 10V | 5V @ 1mA | 16.5nC @ 10V | 540pF @ 25V | 10V | ±20V | ||||
|
RFQ |
1,051
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 3A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 3A (Ta) | 2.25 Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
2,662
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 6.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 450V | 6.5A (Ta) | 1.2 Ohm @ 3.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
3,671
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 550V | 5A (Ta) | 1.7 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
816
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 6A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 6A (Ta) | 1.4 Ohm @ 3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
2,952
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 525V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 525V | 5A (Ta) | 1.5 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
3,028
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 9A TO220FM | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 48W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 9A (Tc) | 535 mOhm @ 2.8A, 10V | 5V @ 1mA | 16.5nC @ 10V | 540pF @ 25V | 10V | ±20V | ||||
|
RFQ |
1,051
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 3A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 3A (Ta) | 2.25 Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
2,579
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 900V 2.4A TO220F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 35W (Tc) | N-Channel | - | 900V | 2.4A (Tc) | 6.7 Ohm @ 1.5A, 10V | 4.5V @ 250µA | 16nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
1,585
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 3.9A TO-220 | SuperFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 50W (Tc) | N-Channel | - | 600V | 3.9A (Tc) | 1.2 Ohm @ 2A, 10V | 5V @ 250µA | 16.6nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
2,924
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 3.7A (Ta) | 2 Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
2,875
In-stock
|
ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 2.5W (Ta), 30W (Tc) | P-Channel | - | 200V | 3.1A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
1,032
In-stock
|
ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 2.5W (Ta), 30W (Tc) | P-Channel | - | 200V | 3.1A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
2,662
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 6.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 450V | 6.5A (Ta) | 1.2 Ohm @ 3.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
3,671
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 550V | 5A (Ta) | 1.7 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
816
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 6A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 6A (Ta) | 1.4 Ohm @ 3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
2,952
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 525V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 525V | 5A (Ta) | 1.5 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
3,028
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 9A TO220FM | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 48W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 9A (Tc) | 535 mOhm @ 2.8A, 10V | 5V @ 1mA | 16.5nC @ 10V | 540pF @ 25V | 10V | ±20V | ||||
|
RFQ |
1,051
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 3A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 3A (Ta) | 2.25 Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||||
|
RFQ |
2,579
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 900V 2.4A TO220F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 35W (Tc) | N-Channel | - | 900V | 2.4A (Tc) | 6.7 Ohm @ 1.5A, 10V | 4.5V @ 250µA | 16nC @ 10V | 540pF @ 25V | 10V | ±30V |