Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,127
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Nexperia USA Inc. MOSFET N-CH 30V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 30V 75A (Tc) 2.8 mOhm @ 25A, 10V 3V @ 1mA 170nC @ 10V 9200pF @ 25V 5V, 10V ±20V
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Per Unit
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1,269
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Infineon Technologies MOSFET N-CH 100V 75A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.8W (Ta), 200W (Tc) N-Channel - 100V 75A (Tc) 14 mOhm @ 45A, 10V 5.5V @ 250µA 170nC @ 10V 6160pF @ 25V 10V ±20V
PSMN003-30P,127
RFQ
RFQ
1,127
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 30V 75A (Tc) 2.8 mOhm @ 25A, 10V 3V @ 1mA 170nC @ 10V 9200pF @ 25V 5V, 10V ±20V
IRFB4710PBF
Per Unit
$3.21
RFQ
RFQ
1,269
In-stock
Infineon Technologies MOSFET N-CH 100V 75A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.8W (Ta), 200W (Tc) N-Channel - 100V 75A (Tc) 14 mOhm @ 45A, 10V 5.5V @ 250µA 170nC @ 10V 6160pF @ 25V 10V ±20V